Self-formation of dielectric layer containing CoSi_2 nanocrystals by plasma-enhanced atomic layer deposition

Han-Bo-Ram Lee; rnHyungjun Kim

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Self-formation of dielectric layer containing CoSi_2 nanocrystals by plasma-enhanced atomic layer deposition

机译：通过等离子体增强原子层沉积自形成含CoSi_2纳米晶体的介电层

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Dielectric layer containing CoSi_2 nanocrystals was directly fabricated by plasma-enhanced atomic layer deposition using CoCp_2 and NH_3 plasma mixed with SiH_4 without annealing process. Synchrotron radiation X-ray diffraction and X-ray photoelectron spectroscopy results confirmed the formation of CoSi_2 nanocrystal. The gate stack composed of dielectric layer containing CoSi_2 nanocrystals with ALD HfO_2 capping layer together with Ru metal gate was analyzed by capacitance-voltage (C-V) measurement. Large hysteresis of C-V curves indicated charge trap effects of CoSi_2 nanocrystals. The current process provides simple route for the fabrication of nanocrystal memory compatible with the current Si device unit processes.

机译：通过使用CoCp_2和NH_3等离子体与SiH_4混合而无需退火工艺，通过等离子体增强的原子层沉积直接制造包含CoSi_2纳米晶体的介电层。同步辐射X射线衍射和X射线光电子能谱结果证实了CoSi_2纳米晶体的形成。通过电容-电压（C-V）测量分析了由堆叠的包含CoSi_2纳米晶体的介电层和ALD HfO_2覆盖层以及Ru金属栅构成的栅堆叠。 C-V曲线的大滞后表明CoSi_2纳米晶体的电荷陷阱效应。当前的工艺为与当前的Si器件单元工艺兼容的纳米晶体存储器的制造提供了简单的途径。

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来源
《Journal of Crystal Growth》 |2010年第15期|P.2215-2219|共5页
作者
Han-Bo-Ram Lee; rnHyungjun Kim;
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作者单位

School of Electrical and Electronic Engineering, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Republic of Korea;

rnSchool of Electrical and Electronic Engineering, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Republic of Korea;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
A1. Nanostructures; A3. Atomic layer epitaxy; B1. Nanomaterials; B2. Semiconducting silicon compounds;

机译：A1。纳米结构;A3。原子层外延;B1。纳米材料B2。半导体硅化合物;

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1. Nitride mediated epitaxy of CoSi_2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co [J] . Han-Bo-Ram Lee, J. Y. Son, H. Kim Applied Physics Letters . 2007,第21期

机译：氮化物通过等离子体增强原子层沉积Co的自层间形成来介导CoSi_2的外延
2. Dielectric barrier layers by low-temperature plasma-enhanced atomic layer deposition of silicon dioxide [J] . Barako Michael T., English Timothy S., Roy-Panzer Shilpi, Thin Solid Films . 2018,第MARa1期

机译：通过低温等离子体增强原子层沉积二氧化硅的介电阻挡层
3. Pentacene-Thin Film Transistors with ZrO_2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition [J] . Sun Jin Yun, Jae Bon Koo, Jung Wook Lim Electrochemical and solid-state letters . 2007,第3期

机译：通过等离子体增强原子层沉积沉积的具有ZrO_2栅介电层的并五苯薄膜晶体管
4. LOW TEMPERATURE DEPOSITION OF AlO_xN_y DIELECTRIC FILM ON POLY-ETHER SULPHONE SUBSTRATE USING PLASMA-ENHANCED ATOMIC LAYER DEPOSITION [C] . Sun Jin Yun, Jung Wook Lim, Jin-Ho Lee ECS Meeting . 2003

机译：使用等离子体增强原子层沉积的聚醚砜基质上的AlO_XN_Y介电膜的低温沉积
5. On the Impact and Growth of Plasma-enhanced Atomic Layer Deposition High-κ Dielectrics on 2D Crystals [D] . Price, Katherine Margaret. 2019

机译：对2D晶体等离子体增强原子层沉积高κ电介质的影响及生长
6. High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3 [O] . Ava Khosravi, Rafik Addou, Massimo Catalano, 2019

机译：ReS2上的高κ介电层：Al2O3的原位热与等离子体增强的原子层沉积
7. High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3 [O] . Ava Khosravi, Rafik Addou, Massimo Catalano, 2019

机译：Res2高κ电介质：原位热量与血浆增强的血浆增强原子层沉积Al2O3

Self-formation of dielectric layer containing CoSi_2 nanocrystals by plasma-enhanced atomic layer deposition

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