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首页> 外文期刊>Journal of Crystal Growth >Hydride-assisted growth of GaN nanowires on Au/Si(0 0 1) via the reaction of Ga with NH_3 and H_2
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Hydride-assisted growth of GaN nanowires on Au/Si(0 0 1) via the reaction of Ga with NH_3 and H_2

机译：通过Ga与NH_3和H_2的反应在Au / Si（0 0 1）上氢化物辅助生长GaN纳米线

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摘要

High quality, straight GaN nanowires (NWs) with diameters of 50 nm and lengths up to 3 μm have been grown on Si(0 0 1) using Au as a catalyst and the direct reaction of Ga with NH_3 and N_2:H_2 at 900 ℃. These exhibited intense, near band edge photoluminescence at 3.42 eV in comparison to GaN NWs with non-uniform diameters obtained under a flow of Ar:NH_3, which showed much weaker band edge emission due to strong non-radiative recombination. A significantly higher yield of β-Ga_2O_3 NWs with diameters of ≤ 50 nm and lengths up to 10 μm were obtained, however, via the reaction of Ga with residual O_2 under a flow of Ar alone. The growth of GaN NWs depends critically on the temperature, pressure and flows in decreasing order of importance but also the availability of reactive species of Ga and N. A growth mechanism is proposed whereby H_2 dissociates on the Au nanoparticles and reacts with Ga giving Ga_xH_y thereby promoting one-dimensional (1D) growth via its reaction with dissociated NH_3 near or at the top of the GaN NWs while suppressing at the same time the formation of an underlying amorphous layer. The higher yield and longer β-Ga_2O_3 NWs grow by the vapor liquid solid mechanism that occurs much more efficiently than nitridation.
机译：以Au为催化剂，在900℃时Ga与NH_3和N_2：H_2直接反应，在Si（0 0 1）上生长了直径50nm，长度达3μm的高质量直GaN纳米线（NWs）。 。与在Ar：NH_3流下获得的具有不均匀直径的GaN NW相比，它们在3.42 eV处显示出强烈的近带边缘光致发光，这归因于强的非辐射复合，显示出弱得多的带边缘发射。然而，通过Ga与残留的O_2在单独的Ar流下的反应，获得了直径≤50 nm，长度最大为10μm的β-Ga_2O_3NW的明显提高的产率。 GaN NW的生长主要取决于温度，压力和流动性，重要性依次降低，还取决于Ga和N的反应性物种的可用性。提出了一种生长机理，其中H_2在Au纳米颗粒上解离并与Ga反应，从而生成Ga_xH_y通过其与GaN NW附近或顶部的离解NH_3反应，促进一维（1D）生长，同时抑制了下面的非晶层的形成。气液固相机理可以产生更高的收率和更长的β-Ga_2O_3NW，而氮化的效率要高得多。

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  • 来源
    《Journal of Crystal Growth》 |2010年第19期|p.2631-2636|共6页
  • 作者

    Matthew Zervos; rnAndreas Othonos;

  • 作者单位

    Nanostructured Materials & Devices laboratory, Department of Mechanical Engineering, Materials Science Group, University of Cyprus, Kalipoleos 75, 1678 Nicosia, P.O. Box 20573, Cyprus;

    rnResearch Centre of Ultrafast Science, Department of Physics, University of Cyprus, Kalipoleos 75, 1678 Nicosia, P.O. Box 20573, Cyprus;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Nanostructures; A1. Nanowires; A3. Hydride vapor phase epitaxy; B1. Nanomaterials; B1. Nitrides; B1. Oxides;

    机译：A1。纳米结构;A1。纳米线;A3。氢化物气相外延;B1。纳米材料B1。氮化物;B1。氧化物;

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