Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilane

B. Vincent; rnR. Loo; rnW. Vandervorst; rnG. Brammertz; rnM. Caymax

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Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilane

机译：通过使用二氯硅烷，硅烷和三硅烷的减压化学气相沉积法实现低温Si同质外延

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Dichlorosilane (DCS), silane and trisilane have been investigated as Si precursors for low temperature (< 700 ℃) Si reduced pressure chemical vapor deposition. DCS and silane are limited to growth temperatures higher than 600-650 and 500 ℃, respectively. At lower temperatures, absence of either Cl or H desorption from the surface impedes Si growth with acceptable growth rate (> 5 A/min). Trisilane permits the growth of Si at lower temperatures below 350 ℃ due to a specific growth mechanism enhancing H desorption. Layers grown at temperatures lower than 500 ℃ are defective, irrespective of the carrier gas, pressure and precursor flow used.

机译：已经研究了二氯硅烷（DCS），硅烷和三硅烷作为低温（<700℃）硅减压化学气相沉积的硅前驱体。 DCS和硅烷的生长温度分别限制在600-650和500℃以上。在较低的温度下，表面不存在Cl或H脱附会阻碍Si以可接受的生长速率（> 5 A / min）生长。甲硅烷允许在低于350℃的较低温度下生长Si，这是由于特定的生长机制增强了H的解吸。在低于500℃的温度下生长的层是有缺陷的，与所用的载气，压力和前体流量无关。

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来源
《Journal of Crystal Growth》 |2010年第19期|p.2671-2676|共6页
作者
B. Vincent; rnR. Loo; rnW. Vandervorst; rnG. Brammertz; rnM. Caymax;
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作者单位

Imec, Kapeldreef 75, 3001 Leuven, Belgium;

rnImec, Kapeldreef 75, 3001 Leuven, Belgium;

rnImec, Kapeldreef 75, 3001 Leuven, Belgium ESAT-INSYS, K.U. Leuven, B-3001 Leuven, Belgium;

rnImec, Kapeldreef 75, 3001 Leuven, Belgium;

rnImec, Kapeldreef 75, 3001 Leuven, Belgium;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
A1. Crystal structure; A1. Desorption; A3. Chemical vapor deposition processes; B2. Semiconducting silicon; B3. Field effect transistors;

机译：A1。晶体结构A1。解吸A3。化学气相沉积工艺;B2。半导体硅;B3。场效应晶体管;

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1. Selective epitaxial growth using dichlorosilane and silane by low pressure chemical vapor deposition [J] . W. Zhang, N.S. Lloyd, K. Osman, Microelectronic Engineering . 2004,第Jun期

机译：使用二氯硅烷和硅烷通过低压化学气相沉积进行选择性外延生长
2. Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane based chemical vapor deposition [J] . Shuzhen You, Stefaan Decoutere, Ngoc Duy Nguyen, Thin Solid Films . 2012,第8期

机译：低温三硅烷化学气相沉积法掺杂砷的Ge掺单极SiGe：C异质结双极晶体管
3. Stable hydrogenated amorphous silicon films deposited from silane and dichlorosilane by radio frequency plasma chemical vapor deposition [J] . Ian S. Osborne, Nobuhiro Hata, Akihisa Matsuda Applied Physics Letters . 1995,第8期

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4. Low pressure chemical vapor deposition of silicon oxynitride films using tetraethylorthosilicate, dichlorosilane and ammonia mixtures [C] . V.Em. Vamvakas, R. Berjoan, S. Schamm, European conference on chemical vapor deposition . 2001

机译：使用四乙基甲基硅酸盐，二氯硅烷和氨混合物的氮氧化硅膜的低压化学气相沉积
5. Low temperature atomic layer epitaxy of silicon in a low pressure chemical vapor deposition reactor. [D] . McIntosh, Forrest Gregg. 1994

机译：低压化学气相沉积反应器中硅的低温原子层外延。
6. Low-temperature-grown continuous graphene films from benzene by chemical vapor deposition at ambient pressure [O] . Jisu Jang, Myungwoo Son, Sunki Chung, -1

机译：在环境压力下通过化学气相沉积法从苯上低温生长的连续石墨烯薄膜
7. Properties of nitrogen doped silicon films deposited by low-pressure chemical vapor deposition from silane and ammonia [O] . Temple Boyer Pierre, Jalabert L., Masarotto L., 2012

机译：低压化学气相沉积由硅烷和氨沉积的氮掺杂硅膜的性能

Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilane

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