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首页> 外文期刊>Journal of Crystal Growth >Thermogravimetric analysis and microstructural observations on the formation of GaN from the reaction between Ga_2O_3 and NH_3
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Thermogravimetric analysis and microstructural observations on the formation of GaN from the reaction between Ga_2O_3 and NH_3

机译:Ga_2O_3与NH_3反应形成GaN的热重分析和微观结构观察

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摘要

Thermogravimetric analysis (TGA) and microstructural observations were carried to investigate the nitridation mechanism of β-Ga_2O_3 powder to GaN under an NH_3/Ar atmosphere. Non-isothermal TGA showed that nitridation of β-Ga_2O_3 starts at ~650 ℃, followed by decomposition of GaN at ~1100 ℃. Isothermal TGA showed that nitridation follows linear kinetics in the temperature range 800-1000 ℃. At an early stage of nitridation, small GaN particles (~5 nm) are deposited on the β-Ga_2O_3 crystal surface and they increase with time. We proposed a mechanism for the nitridation of Ga_2O_3 by NH_3 whereby nitridation of β-Ga_2O_3 proceeds via the intermediate vapor species Ga_2O(g).
机译:进行了热重分析(TGA)和微观结构观察,以研究在NH_3 / Ar气氛下β-Ga_2O_3粉末对GaN的氮化机理。非等温热重分析表明,β-Ga_2O_3的氮化作用在〜650℃开始,然后在〜1100℃分解。等温TGA分析表明,在800〜1000℃范围内,氮化遵循线性动力学。在氮化的早期阶段,小的GaN颗粒(约5 nm)沉积在β-Ga_2O_3晶体表面上,并且随时间增加。我们提出了一种NH_3氮化Ga_2O_3的机制,其中β-Ga_2O_3的氮化通过中间蒸气物种Ga_2O(g)进行。

著录项

  • 来源
    《Journal of Crystal Growth》 |2010年第19期|p.2823-2827|共5页
  • 作者单位

    Graduate School of Engineering, Hokkaido University, Sapporo 060-8628, Japan;

    rnGraduate School of Engineering, Hokkaido University, Sapporo 060-8628, Japan;

    rnGraduate School of Engineering, Hokkaido University, Sapporo 060-8628, Japan;

    rnGraduate School of Engineering, Hokkaido University, Sapporo 060-8628, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Growth models; A2. Growth from vapor; B1. Nitrides;

    机译:A1。增长模型;A2。蒸气生长;B1。氮化物;

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