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首页> 外文期刊>Journal of Crystal Growth >Growth of EuTe islands on SnTe by molecular beam epitaxy
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Growth of EuTe islands on SnTe by molecular beam epitaxy

机译：分子束外延在SnTe上生长EuTe岛

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摘要

Semiconductor magnetic quantum dots are very promising structures, with novel properties that find multiple applications in spintronic devices. EuTe is a wide gap semiconductor with NaCl structure, and strong magnetic moments S=7/2 at the half filled 4f~7 electronic levels. On the other hand, SnTe is a narrow gap semiconductor with the same crystal structure and 4% lattice mismatch with EuTe. In this work, we investigate the molecular beam epitaxial growth of EuTe on SnTe after the critical thickness for island formation is surpassed, as a previous step to the growth of organized magnetic quantum dots. The topology and strain state of EuTe islands were studied as a function of growth temperature and EuTe nominal layer thickness. Reflection high energy electron diffraction (RHEED) was used in-situ to monitor surface morphology and strain state. RHEED results were complemented and enriched with atomic force microscopy and grazing incidence X-ray diffraction measurements made at the XRD2 beamline of the Brazilian Synchrotron. EuTe islands of increasing height and diameter are obtained when the EuTe nominal thickness increases, with higher aspect ratio for the islands grown at lower temperatures. As the islands grow, a relaxation toward the EuTe bulk lattice parameter was observed. The relaxation process was partially reverted by the growth of the SnTe cap layer, vital to protect the EuTe islands from oxidation. A simple model is outlined to describe the distortions caused by the EuTe islands on the SnTe buffer and cap layers. The SnTe cap layers formed interesting plateau structures with easily controlled wall height, that could find applications as a template for future nanostructures growth.
机译：半导体磁性量子点是非常有前途的结构，具有新颖的特性，可在自旋电子器件中找到多种应用。 EuTe是具有NaCl结构的宽禁带半导体，在半填充的4f〜7电子能级上具有很强的磁矩S = 7/2。另一方面，SnTe是具有相同晶体结构和与EuTe的4％晶格失配的窄间隙半导体。在这项工作中，我们研究了超过Sn的临界厚度之后，EuTe在SnTe上的分子束外延生长，这是有组织磁性量子点生长的前一步。研究了EuTe岛的拓扑和应变状态，其与生长温度和EuTe标称层厚度的关系。反射高能电子衍射（RHEED）用于原位监测表面形态和应变状态。 RHEED结果得到了补充，并在巴西同步加速器的XRD2光束线上进行了原子力显微镜检查和掠入射X射线衍射测量。当EuTe标称厚度增加时，会获得高度和直径增加的EuTe岛，岛的长宽比越高，则在较低温度下生长。随着岛的增长，观察到向EuTe体晶格参数的弛豫。 SnTe盖层的生长部分缓解了松弛过程，这对于保护EuTe岛免受氧化至关重要。概述了一个简单的模型来描述由SnTe缓冲层和盖层上的EuTe岛引起的变形。 SnTe盖层形成了有趣的高原结构，其壁高易于控制，可以作为未来纳米结构增长的模板找到应用。

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  • 来源
    《Journal of Crystal Growth》 |2010年第19期|p.2828-2833|共6页
  • 作者

    B. Diaz; rnA. Malachias; rnP.H.O. Rappl; rnE. Abramof; rnV.A. Chitta; rnA.B. Henriques;

  • 作者单位

    Laboratorio Associado de Sensores e Materials, Instituto National de Pesquisas Espatiais, Postal Box 515, Sao Jose dos Campos, 12227-010 SP, Brazil;

    rnLaboratorio National de Luz Sincrotron, Postal Box 6192, Campinas, 13083-970 SP, Brazil;

    rnLaboratorio Associado de Sensores e Materials, Instituto National de Pesquisas Espatiais, Postal Box 515, Sao Jose dos Campos, 12227-010 SP, Brazil;

    rnLaboratorio Associado de Sensores e Materials, Instituto National de Pesquisas Espatiais, Postal Box 515, Sao Jose dos Campos, 12227-010 SP, Brazil;

    rnInstituto de Fisica, Universidade de Sao Paulo, Postal Box 66318, Sao Paulo, 05315-970 SP, Brazil;

    rnInstituto de Fisica, Universidade de Sao Paulo, Postal Box 66318, Sao Paulo, 05315-970 SP, Brazil;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Atomic force microscopy; A1. X-ray diffraction; A1. Reflection high energy electron diffraction; A3. Molecular beam epitaxy; A3. Quantum dots; B2. Semiconducting materials;

    机译：A1。原子力显微镜;A1。 X射线衍射;A1。反射高能电子衍射;A3。分子束外延;A3。量子点;B2。半导体材料;

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