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首页> 外文期刊>Journal of Crystal Growth >Thermal-induced phase transition and assembly of hexagonal metastable In_2O_3 nanocrystals: A new approach to In_2O_3 functional materials
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Thermal-induced phase transition and assembly of hexagonal metastable In_2O_3 nanocrystals: A new approach to In_2O_3 functional materials

机译：六方亚稳态In_2O_3纳米晶体的热诱导相变和组装：In_2O_3功能材料的新方法

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摘要

This paper reports on the thermal-induced performance of hexagonal metastable In_2O_3 nanocrystals involving in phase transition and assembly, with particular emphasis on the assembly for the preparation of functional materials. For In_2O_3 nanocrystals, the metastable phase was found to be thermally unstable and transform to cubic phase when temperature was higher than 600 ℃, accompanied by assembly as well as evolution of optical properties, but the two polymorphs coexisted at the temperature ranging from 600 to 900 ℃, during which the content of product phase and crystal size gradually increased upon increasing temperature. The assembly of In_2O_3 nanocrystals can be developed to fabricate In_2O_3 functional materials, such as various ceramic materials, or even desired nano- or micro-structures, by using metastable In_2O_3 nanocrystals as precursors or building blocks. The electrical resistivity of In_2O_3 conductive film fabricated by a hot-pressing route was as low as 3.72 × 10~(-3) Ω cm, close to that of In_2O_3 single crystal, which is important for In_2O_3 that is always used as conductive materials. The findings should be of importance for both the wide applications of In_2O_3 in optical and electronic devices and theoretical investigations on crystal structures.
机译：本文报道了六方亚稳态In_2O_3纳米晶体的热诱导性能，涉及相变和组装，尤其着重于制备功能材料的组装。对于In_2O_3纳米晶体，发现亚稳相在温度高于600℃时是热不稳定的，并转变为立方相，并伴随组装和光学性质的演变，但两种多晶型在600-900的温度下共存。 ℃，在此期间产物相的含量和晶体尺寸随着温度的升高而逐渐增加。通过使用亚稳的In_2O_3纳米晶体作为前体或构件，可以开发In_2O_3纳米晶体的组装体以制造In_2O_3功能材料，例如各种陶瓷材料，甚至是所需的纳米结构或微结构。通过热压工艺制备的In_2O_3导电膜的电阻率低至3.72×10〜（-3）Ωcm，接近In_2O_3单晶的电阻率，这对于始终用作导电材料的In_2O_3至关重要。这些发现对于In_2O_3在光学和电子设备中的广泛应用以及对晶体结构的理论研究均具有重要意义。

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  • 来源
    《Journal of Crystal Growth》 |2010年第21期|p.3111-3116|共6页
  • 作者

    Shiwen Shu; Dabin Yu; Yan Wang; Feng Wang; Zirong Wang; Wu Zhong;

  • 作者单位

    State Key Laboratory of Puked Power Laser Technology, Electronic Engineering Institute, 460 Huangshan Road, Hefei, Anhui 230037, PR China;

    State Key Laboratory of Puked Power Laser Technology, Electronic Engineering Institute, 460 Huangshan Road, Hefei, Anhui 230037, PR China;

    State Key Laboratory of Puked Power Laser Technology, Electronic Engineering Institute, 460 Huangshan Road, Hefei, Anhui 230037, PR China;

    State Key Laboratory of Puked Power Laser Technology, Electronic Engineering Institute, 460 Huangshan Road, Hefei, Anhui 230037, PR China;

    State Key Laboratory of Puked Power Laser Technology, Electronic Engineering Institute, 460 Huangshan Road, Hefei, Anhui 230037, PR China;

    State Key Laboratory of Puked Power Laser Technology, Electronic Engineering Institute, 460 Huangshan Road, Hefei, Anhui 230037, PR China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Crystal structure; A1. Nanostructures; B1. Oxides; B2. Semiconducting materials;

    机译：A1。晶体结构A1。纳米结构;B1。氧化物;B2。半导体材料;

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