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首页> 外文期刊>Journal of Crystal Growth >Growth and Raman spectroscopic characterization of As_4S_4 (Ⅱ) single crystals
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Growth and Raman spectroscopic characterization of As_4S_4 (Ⅱ) single crystals

机译：As_4S_4（Ⅱ）单晶的生长和拉曼光谱表征

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摘要

As described by Kutoglu (1976 [16]), single crystals of As_4S_4 (Ⅱ) phase have been grown using a new two-step synthesis that drastically increases the reproducibility that is attainable in synthetic experiments. First, through photo-induced phase transformation, pararealgar powder is prepared as a precursor instead of AsS melt. Then it is dissolved and recrystallized from CS_2 solvent. Results show that single crystals of the As_4S_4 (Ⅱ) phase were obtained reproducibly through the dissolution-recrystallization process. Single crystals of As_4S_4 (Ⅱ) obtained using this method were translucent and showed a uniform yellow-orange color. The crystal exhibits a platelet-like shape as a thin film with well-developed faces (0 1 0) and (0 I 0). The grown crystals are as large as 0.50 × 0.50 × 0.01 mm. They were characterized using powder and single crystal X-ray diffraction techniques to confirm the phase identification and the lattice parameters. The As_4S_4 (Ⅱ) phase crystallizes in monoclinic system with cell parameters α=11.202(4)A, b=9.954(4)A, c=7.142(4)A, β=92.81(4)°,V=795.4(6)A~3, which shows good agreement with the former value. Raman spectroscopic studies elucidated the behavior of the substance and the relation among phases of tetra-arsenic tetrasulfide.
机译：如Kutoglu（1976 [16]）所述，As_4S_4（Ⅱ）相的单晶已经使用新的两步合成法进行了生长，该合成法极大地提高了合成实验中可获得的可重复性。首先，通过光致相变，将顺式雄黄粉末制备为前驱体而不是AsS熔体。然后将其溶解并从CS_2溶剂中重结晶。结果表明，通过溶解-重结晶过程可再现地获得As_4S_4（Ⅱ）相的单晶。用该方法得到的As_4S_4（Ⅱ）单晶体为半透明，并呈现均匀的橙橙色。晶体表现为薄片状的形状，其薄膜具有良好的面（0 1 0）和（0 I 0）。生长的晶体大至0.50×0.50×0.01 mm。使用粉末和单晶X射线衍射技术对它们进行了表征，以确认相识别和晶格参数。 As_4S_4（Ⅱ）相在单斜晶系系统中结晶，晶胞参数为α= 11.202（4）A，b = 9.954（4）A，c = 7.142（4）A，β= 92.81（4）°，V = 795.4（6 ）A〜3，与前一个值具有很好的一致性。拉曼光谱研究阐明了该物质的行为以及四硫化四砷的各相之间的关系。

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  • 来源
    《Journal of Crystal Growth》 |2010年第23期|p.3490-3492|共3页
  • 作者

    Atsushi Kyono;

  • 作者单位

    Division of Earth Evolution Sciences, Graduate School of Life and Environmental Sciences, University of Tsukuba, 1-1-1 Tennodai Tsukuba, Ibaraki 305-8572, Japan Geophysical Laboratory, Carnegie Institution of Washington. 5251 Broad Branch Road, NW, Washington, DC 20015-1305, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Recrystallization; A1. X-ray diffraction; A2. Growth from solutions; B1. Sulfides; B2. Semiconducting materials;

    机译：A1。重结晶;A1。 X射线衍射;A2。解决方案的增长;B1。硫化物;B2。半导体材料;

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