Prediction of the three-phase boundary movement in Czochralski crystal growth

著录项

• 来源
  《Journal of Crystal Growth》 |2010年第17期|P.2297-2299|共3页
• 作者

  A. Raufeisen; M. Breuer; T. Botsch; A. Delgado;

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• 作者单位

  Faculty of Process Engineering (VT), Georg Simon Ohm University of Applied Sciences Nuremberg, Wassertorstrasse 10, D-90489 Nuremberg, Germany;

  rnDepartment of Fluid Mechanics (PfS), Helmut Schmidt University Hamburg, Holstenhofweg 85, D-22043 Hamburg, Germany;

  rnFaculty of Process Engineering (VT), Georg Simon Ohm University of Applied Sciences Nuremberg, Wassertorstrasse 10, D-90489 Nuremberg, Germany;

  rnInstitute of Fluid Mechanics (LSTM), Friedrich Alexander University Erlangen-Nuremberg, Cauerstrasse 4, D-91058 Erlangen, Germany;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A1. Computer simulation; A1. Interfaces; A2. Czochralski method; B2. Semiconducting silicon;

  机译：A1。计算机仿真;A1。接口;A2。直拉法;B2。半导体硅;