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首页> 外文期刊>Journal of Crystal Growth >Genetic patterns of Zn_2GeO_4 coated ZnO nanowires from phase texture distribution of biphase brass substrate
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Genetic patterns of Zn_2GeO_4 coated ZnO nanowires from phase texture distribution of biphase brass substrate

机译:从双相黄铜基底的相织构分布看Zn_2GeO_4包覆的ZnO纳米线的遗传模式

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摘要

Based on the natural patterns of phase texture distribution of (α+β) biphase brass substrate, we synthesize the patterned quasi-aligned Zn_2GeO_4 coated ZnO nanowires by one-step thermal evaporation of the mixture powders of GeO_2 and C, and characterize the products by means of X-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy, optical microscopy and photoluminescence spectroscopy. It is observed that following the self-catalyzed effect of the Zn clusters, quasi-aligned Zn_2GeO_4 coated ZnO nanowires grow site-selectively on the surface of island-shaped α phase and form novel patterns which inherit the distribution of α phase on the substrate. According to the pattern and feature of phase texture distribution of the alloy substrate, we can synthesize the patterned nanowires arrays with controlled location and distribution in a more effective way.
机译:基于(α+β)双相黄铜基底的相织构分布的自然规律,我们通过一步热蒸发GeO_2和C的混合粉末,合成了图案化的准取向Zn_2GeO_4包覆的ZnO纳米线,并通过X射线衍射,场发射扫描电子显微镜,高分辨率透射电子显微镜,光学显微镜和光致发光光谱的手段。观察到,在Zn簇的自催化作用之后,准取向的Zn_2GeO_4包覆的ZnO纳米线在岛状α相的表面上选择性地生长,并形成继承了α相在基板上的分布的新颖图案。根据合金基体相织构分布的规律和特点,可以更有效地合成具有受控位置和分布的图案化纳米线阵列。

著录项

  • 来源
    《Journal of Crystal Growth》 |2010年第17期|P.2479-2483|共5页
  • 作者单位

    School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China;

    rnSchool of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China;

    rnSchool of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China;

    rnSchool of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China;

    rnSchool of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China;

    rnSchool of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China;

    rnSchool of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China;

    rnSchool of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Substrates; A2. Growth from vapor; A3. Physical vapor deposition processes; B1. Nanomaterials; B2. Semiconducting materials;

    机译:A1。基材;A2。蒸气生长;A3。物理气相沉积过程;B1。纳米材料B2。半导体材料;

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