The effects of rapid thermal annealing on doubled quantum dots grown by molecular beam epitaxy

著录项

• 来源
  《Journal of Crystal Growth》 |2009年第7期|1791-1794|共4页
• 作者

  S. Suraprapapich; Y.M. Shen; Y. Fainman; Y. Horikoshi; S. Panyakeow; C.W. Tu;

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• 作者单位

  Department of Electrical and Computer Engineering, University of California San Diego, La folia, CA 92093-0407, USA Department of Electrical Engineering Chulalongkorn University, Phayathai Road, Patumwan, Bangkok 10330, Thailand Kagami Memorial Laboratory for Material Science and Technology, Waseda University, Tokyo 169-0051, Japan;

  Department of Electrical and Computer Engineering, University of California San Diego, La folia, CA 92093-0407, USA;

  Department of Electrical and Computer Engineering, University of California San Diego, La folia, CA 92093-0407, USA;

  Kagami Memorial Laboratory for Material Science and Technology, Waseda University, Tokyo 169-0051, Japan;

  Department of Electrical Engineering Chulalongkorn University, Phayathai Road, Patumwan, Bangkok 10330, Thailand;

  Department of Electrical and Computer Engineering, University of California San Diego, La folia, CA 92093-0407, USA;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  double quantum dot; rapid thermal annealing; molecular beam epitaxy;

  机译：双量子点快速热退火;分子束外延;