Formation of linear InAs/InGaAsP/InP (100) quantum dot arrays by self-organized anisotropic strain engineering in chemical beam epitaxy

N. Sritirawisarn; F.W.M. van Otten; T.J. Eijkemans; R. Noetzel

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Formation of linear InAs/InGaAsP/InP (100) quantum dot arrays by self-organized anisotropic strain engineering in chemical beam epitaxy

机译：化学束外延中自组织各向异性应变工程形成线性InAs / InGaAsP / InP（100）量子点阵列

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The formation of laterally ordered linear InAs quantum dot (QD) arrays based on self-organized anisotropic strain engineering is demonstrated. An InAs/InGaAsP superlattice (SL) on InP (100) serves as a template for the QD arrays grown by chemical beam epitaxy. The InAs QD arrays exhibit excellent photoluminescence emission up to room temperature which is tuned into the 1.55-um telecom wavelength region through the insertion of ultra-thin GaAs interlayers. Stacking of the QD arrays with identical emission wavelength upon adjusting the GaAs interlayer thickness produces a three-dimensionally self-ordered Q.D crystal.

机译：演示了基于自组织各向异性应变工程的横向有序线性InAs量子点（QD）阵列的形成。 InP（100）上的InAs / InGaAsP超晶格（SL）用作通过化学束外延生长的QD阵列的模板。 InAs QD阵列在室温下仍具有出色的光致发光发射特性，通过插入超薄GaAs中间层可将其调谐到1.55um的电信波长区域。调整GaAs层间厚度后，将具有相同发射波长的QD阵列堆叠会产生三维自定序的Q.D晶体。

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来源
《Journal of Crystal Growth》 |2009年第7期|1822-1824|共3页
作者
N. Sritirawisarn; F.W.M. van Otten; T.J. Eijkemans; R. Noetzel;
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作者单位

COBRA Research Institute on Communication Technology, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands;

COBRA Research Institute on Communication Technology, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands;

COBRA Research Institute on Communication Technology, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands;

COBRA Research Institute on Communication Technology, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
low dimensional structures; chemical beam epitaxy; phosphides; semiconducting indium phosphide;

机译：低维结构;化学束外延;磷化物;半导体磷化铟;

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专利

1. Wavelength controlled multilayer-stacked linear InAs quantum dot arrays on InGaAsP/InP (100) by self-organized anisotropic strain engineering: A self-ordered quantum dot crystal [J] . N. Sritirawisarn, F. W. M. van Otten, T. J. Eijkemans, Applied Physicsletters . 2008,第13期

机译：通过自组织各向异性应变工程在InGaAsP / InP（100）上进行波长控制的多层堆叠线性InAs量子点阵列：自排序量子点晶体
2. InAs quantum dot arrays on InGaAsP/InP(100)by self-organized anisotropic strain engineeringFormation of stacked linear [J] . Nut Sritirawisarn, Frank W. M. van Otten, Tom J. Eijkemans, Physica status solidi, B. Basic research . 2009,第4期

机译：自组织各向异性应变工程在InGaAsP / InP（100）上的InAs量子点阵列
3. Formation of linear InAs quantum dot arrays on InGaAsP/InP (100) by self-organized anisotropic strain engineering and their optical properties [J] . N. Sritirawisarn, F. W. M. van Otten, T. J. Eijkemans, Journal of Applied Physics . 2007,第5期

机译：自组织各向异性应变工程在InGaAsP / InP（100）上形成线性InAs量子点阵列及其光学性质
4. Formation of aligned InAs and (In,Ga)As quantum dotarrays on GaAs (100) by anisotropic strain engineeringof a self-organized (In,Ga)As superlattice template [C] . T. Mano, R. N?tzel, G. J. Hamhuis, International conference on the physics of semiconductors;ICPS . 2002

机译：通过自组织（In，Ga）As超晶格模板的各向异性应变工程在GaAs（100）上形成对准的InAs和（In，Ga）As量子点阵列
5. Alternating molecular beam epitaxy and characterization of InGaAs quantum dots and quantum dot lasers. [D] . Mirin, Richard Paul. 1996

机译：InGaAs量子点和量子点激光器的交替分子束外延和表征。
6. Tunable Emission Wavelength Stacked InAs/GaAs Quantum Dots by Chemical Beam Epitaxy for Optical Coherence Tomography [O] . Bouraoui Ilahi, Jihene Zribi, Maxime Guillotte, 2016

机译：通过化学束外延法对InAs / GaAs量子点可调的发射波长进行光学相干层析成像
7. Wavelength controlled multilayer-stacked linear InAs quantum dot arrays on InGaAsP/InP(100) by self-organized anisotropic strain engineering : a self-ordered quantum dot crystal [O] . Sritirawisarn, N Nut, Otten, van, FWM Frank, Eijkemans, TJ Tom, 2008

机译：通过自组织各向异性应变工程在InGaAsP / InP（100）上的波长控制的多层堆叠线性InAs量子点阵列：自排序量子点晶体
8. Much Improved Self-Organized In(0.53)Ga(0.47)As Quantum Wire Lasers Grown on (775)B InP Substrates by Molecular Beam Epitaxy [R] . Ohmori, K. , Hino, H. , Fujita, T. , 2006

机译：通过分子束外延在（775）B Inp衬底上生长的大量改进的自组织In（0.53）Ga（0.47）as量子线激光器

Formation of linear InAs/InGaAsP/InP (100) quantum dot arrays by self-organized anisotropic strain engineering in chemical beam epitaxy

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