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首页> 外文期刊>Journal of Crystal Growth >Chemical beam epitaxy of highly ordered network of tilted InP nanowires on silicon
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Chemical beam epitaxy of highly ordered network of tilted InP nanowires on silicon

机译：硅上倾斜的InP纳米线的高度有序网络的化学束外延

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摘要

In this work, the growth of undoped InP nanowires on silicon( 111) using gold as the metal seed particle was undertaken by chemical beam epitaxy. Prior to the growth process an ordered array of gold nano dots is integrated on the surface of a silicon substrate using self-assembled (hexagonal compact array) polystyrene nanospheres as the Au evaporation template. The size of the gold nanodots ranged from 20 to 150 nm. The InP nanowires were characterized using scanning electron microscopy (SEM), X-ray diffraction (XRD) and photoluminescence (PL). The InP nanowires were found to grow tilted in the <100> direction and exhibited slightly broadened low-temperature photoluminescence emissions.
机译：在这项工作中，通过化学束外延进行了以金为金属种子粒子的无掺杂InP纳米线在硅（111）上的生长。在生长过程之前，使用自组装（六边形紧凑阵列）聚苯乙烯纳米球作为Au蒸发模板，将有序排列的金纳米点阵列集成在硅基板的表面上。金纳米点的尺寸为20至150nm。 InP纳米线使用扫描电子显微镜（SEM），X射线衍射（XRD）和光致发光（PL）进行表征。发现InP纳米线在<100>方向上倾斜生长，并显示出稍宽的低温光致发光发射。

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  • 来源
    《Journal of Crystal Growth》 |2009年第7期|1855-1858|共4页
  • 作者

    G. Radhakrishnan; A. Freundlich; B. Fuhrmann;

  • 作者单位

    Photovoltaics and Nanostructures Laboratories, Center for Advanced Materials, University of Houston, Houston, TX 77204-5004, USA Electrical and Computer Engineering Department, University of Houston, Houston, TX 77004-4005, USA;

    Photovoltaics and Nanostructures Laboratories, Center for Advanced Materials, University of Houston, Houston, TX 77204-5004, USA Electrical and Computer Engineering Department, University of Houston, Houston, TX 77004-4005, USA Physics Department, University of Houston, Houston, TX 77204-5004, USA;

    Martin Luther University of Halle, Interdisciplinary Centre of Materials Science, Heinrich-Damerow-Strasse 4, D-06120 Halle, Germany;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    eutectics; chemical beam epitaxy; nanowires;

    机译：共晶;化学束外延;纳米线;

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