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首页> 外文期刊>Journal of Crystal Growth >Annealing studies on InN thin films grown by modified activated reactive evaporation
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Annealing studies on InN thin films grown by modified activated reactive evaporation

机译：改性活化反应蒸发生长InN薄膜的退火研究

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摘要

We describe the effect of annealing in air and in vacuum on structural, electrical and optical properties of indium nitride (InN) thin films. The films were grown by modified activated reactive evaporation. Films annealed in air were transformed to In_2O_3 at 450 ℃ whereas films annealed in vacuum started decomposing at 500 ℃. The c-lattice constant was found decreasing for increasing annealing temperature due to reduction of excess nitrogen in the films. The major changes in structural, electrical and optical properties appear around 400 ℃. Both air and vacuum-annealed films show a reduction in the carrier concentration with annealing, explaining the observed reduction in bandgap (Moss-Burstein shift) for vacuum-annealed films. For air-annealed films, the bandgap increases when annealed, which may be due to oxynitride formation overcoming the effect of reduced carrier concentration. A decrease in the photoluminescence intensity was observed at 400 ℃ for air-annealed and 500 ℃ for vacuum-annealed films which can be attributed, respectively, to the presence of indium oxide and indium in the films. Optimal annealing temperature was observed between 400 and 450 ℃ in vacuum.
机译：我们描述了在空气和真空中退火对氮化铟（InN）薄膜的结构，电学和光学性质的影响。通过改性的活化反应蒸发来生长膜。在空气中退火的薄膜在450℃转变为In_2O_3，而在真空中退火的薄膜在500℃开始分解。发现由于晶格中过量氮的减少，c晶格常数随着退火温度的升高而降低。在400℃左右出现结构，电学和光学性质的主要变化。空气退火膜和真空退火膜均显示出退火过程中载流子浓度的降低，这解释了观察到的真空退火膜的带隙降低（Moss-Burstein位移）。对于空气退火的薄膜，带隙在退火时会增加，这可能是由于氮氧化物的形成，克服了载流子浓度降低的影响。空气退火薄膜在400℃和真空退火薄膜在500℃观察到光致发光强度降低，这分别归因于薄膜中存在氧化铟和铟。在真空中观察到最佳退火温度在400至450℃之间。

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