Phase separation phenomenon in MOCVD-grown GaInP epitaxial layers

著录项

• 来源
  《Journal of Crystal Growth》 |2009年第11期|3220-3224|共5页
• 作者

  Yu-Li Tsai; Ray-Hua Horng; Ming-Chun Tseng; Chia-hao Kuo; Po-Liang Liu; Dong-Sing Wuu; Der-Yuh Lin;

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• 作者单位

  Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan, R.O.C;

  Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan, R.O.C;

  Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan, R.O.C;

  Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan, R.O.C;

  Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan, R.O.C;

  Department of Materials Engineering, National Chung Hsing University, Taichung 402, Taiwan, R.O.C;

  Department of Electronic Engineering, National Changhua University of Education, Changhua 500, Taiwan, R.O.C;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A1. Stresses; A1. S-ray diffraction; A3. Metalorganic chemical vapor deposition; B1. GainP;

  机译：A1。压力;A1。 S射线衍射;A3。金属有机化学气相沉积;B1。增益;