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The reduction of the misfit dislocation in non-doped AlAs/GaAs DBRs

机译：非掺杂AlAs / GaAs DBR中失配位错的减少

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摘要

The non-doped AlAs/GaAs distributed Bragg reflectors (DBRs) with density of misfit dislocation (MD) close to zero had been obtained. The reduction of MD density was achieved by increasing temperature distribution homogeneity on the growing crystal in consequence of higher rotation rate of the wafer. Two structures of DBR were crystallized using molecular beam epitaxy (MBE) under the same optimal growth condition. The growth runs differ only in the rotation rate of the wafers. X-ray topograph showed no residual MDs in case of faster rotation. The DBR structure with residual MD density is still highly strained. No additional relaxation process has occurred, what was confirmed by an angular position of DBR zeroth-order peak on high-resolution X-ray diffractometry (HRXRD) rocking curve.
机译：已获得失配位错（MD）密度接近零的非掺杂AlAs / GaAs分布布拉格反射器（DBR）。 MD密度的降低是通过提高晶片旋转速度的结果，提高生长晶体上的温度分布均匀性来实现的。在相同的最佳生长条件下，使用分子束外延（MBE）使DBR的两个结构结晶。生长行程仅在晶片的旋转速率上不同。 X射线地形图显示在旋转较快的情况下没有残留的MD。具有残余MD密度的DBR结构仍然高度应变。高分辨率X射线衍射（HRXRD）摇摆曲线上的DBR零级峰的角位置确认了没有发生任何其他的弛豫过程。

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  • 来源
    《Journal of Crystal Growth》 |2009年第16期|3975-3977|共3页
  • 作者

    A. Jasik; W. Wierzchowski; J. Muszalski; J. Gaca; M. Wojcik; K. Pierscinski;

  • 作者单位

    Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw, Poland;

    Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland;

    Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw, Poland;

    Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland;

    Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland;

    Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw, Poland;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. High-resolution X-ray diffraction; A1. Line defects; A3. MBE; B2. Semiconducting III-V materials;

    机译：A1。高分辨率X射线衍射;A1。线路缺陷;A3。 MBE;B2。半导体III-V材料;

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