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首页> 外文期刊>Journal of Crystal Growth >LEC growth of semi-insulating GaAs crystals in traveling magnetic field generated in a heater-magnet module
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LEC growth of semi-insulating GaAs crystals in traveling magnetic field generated in a heater-magnet module

机译：半绝缘GaAs晶体在加热磁铁模块产生的行进磁场中的LEC生长

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摘要

For the first time semi-insulating (SI) GaAs single crystals were grown by the liquid encapsulated Czochralski (LEC) method using a traveling magnetic field (TMF) system generated in a heater-magnet module (HMM). The system was developed within the framework of the KRISTMAG~® project. The HMM, that generates heat and TMF simultaneously, was placed closely around the crucible inside the chamber of the industrial CI 358 puller. Before the growth experiments the induced vertical Lorentz force density F_(LZ) was evaluated by the weight force response of a dummy. First growth experiments at various flφ ratios (f-frequency and φ-phase shift) were carried out. Interface morphology and temperature fluctuation strengths were analyzed by a striation technique. Etch pit density, carbon, residual impurity and EL2° contents as well as electrical properties of the as-grown TMF-LEC GaAs crystals were measured. A preliminary correlation between crystal qualities and field frequency has been noticed.
机译：首次使用在加热磁铁模块（HMM）中产生的行进磁场（TMF）系统，通过液体封装的切克劳斯基（LEC）方法生长了半绝缘（SI）GaAs单晶。该系统是在KRISTMAG〜®项目的框架内开发的。将同时产生热量和TMF的HMM放置在工业CI 358拉拔器腔室内的坩埚周围。在生长实验之前，通过假人的重力响应来评估诱导的垂直洛伦兹力密度F_（LZ）。进行了各种flφ比率（f频率和φ相移）的首次生长实验。通过条纹技术分析界面形态和温度波动强度。测量了生长的TMF-LEC GaAs晶体的腐蚀坑密度，碳，残留杂质和EL2°含量以及电性能。已经注意到晶体质量和场频之间的初步相关性。

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