Multi-analytical study of syntactic coalescence of polytypes in a 6H-SiC sample

著录项

• 来源
  《Journal of Crystal Growth》 |2009年第24期|4784-4790|共7页
• 作者

  G. Agrosi; G. Tempesta; G.C. Capitani; E. Scandale; D. Siche;

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• 作者单位

  Dipartimento Geomineralogico, Universita di Bari, Via E. Orabona 4,1-70125 Bari, Italy;

  Dipartimento Geomineralogico, Universita di Bari, Via E. Orabona 4,1-70125 Bari, Italy;

  Dipartimento di Scienze Geologiche e Geotecnologie, Universita degli Studi di Milano Bicocca, P.za della Scienza 4, 20126 Milano, Italy;

  Dipartimento Geomineralogico, Universita di Bari, Via E. Orabona 4,1-70125 Bari, Italy;

  Institute for Crystal Growth (IKZ), Max-Born-Stmsse 2, D-12489 Berlin, Germany;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A1. Characterization; A1. Defect distribution; A1. Transmission electron microscopy; A1. X-ray diffraction topography; B2. Semiconducting silicon compounds;

  机译：A1。表征;A1。缺陷分布;A1。透射电子显微镜;A1。 X射线衍射形貌;B2。半导体硅化合物;