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首页> 外文期刊>Journal of Crystal Growth >The radial distribution of dopant (Cr, Nd, Yb, or Ce) in yttrium aluminum garnet (Y_3Al_5O_(12)) single crystals grown by the micro-pulling-down method
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The radial distribution of dopant (Cr, Nd, Yb, or Ce) in yttrium aluminum garnet (Y_3Al_5O_(12)) single crystals grown by the micro-pulling-down method

机译:微拉法生长钇铝石榴石(Y_3Al_5O_(12))单晶中掺杂物(Cr,Nd,Yb或Ce)的径向分布

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摘要

Dopant distribution in yttrium aluminum garnet (YAG:Y_3Al_5O_(12)) shaped crystal grown via the micro-pulling-down method depends primarily on the distribution coefficient (k~0). The solid-favoring dopants (k~0>1.0), Cr and Yb, concentrated in the central core of the crystal, while the liquid-favoring dopants (k~0<1.0), Nd and Ce, concentrated in the rim. Secondary rare-earth oxide phases were sometimes segregated and crystallized circumferentially with Nd and Ce dopant. The dopant distribution profile was also controlled by the position of the melt entrance hole in the crucible shaper, which was confirmed by SIMPLER calculation. Segregation/distribution coefficients for Cr, Yb, Nd, and Ce in YAG were found to be 1.5,1.01, 0.1, and 0.01, respectively.
机译:通过微下拉法生长的钇铝石榴石(YAG:Y_3Al_5O_(12))形晶体中的掺杂物分布主要取决于分布系数(k〜0)。有利于固体的掺杂物(k〜0> 1.0)Cr和Yb集中在晶体的中心核中,而有利于液体的掺杂剂(k〜0 <1.0)Nd和Ce集中在晶体的边缘。次要稀土氧化物相有时会被Nd和Ce掺杂剂沿周向分离和结晶。掺杂剂分布曲线也由坩埚成型机中熔体入口的位置控制,这通过SIMPLER计算得到了证实。发现YAG中Cr,Yb,Nd和Ce的偏析/分布系数分别为1.5、1.01、0.1和0.01。

著录项

  • 来源
    《Journal of Crystal Growth》 |2009年第24期|4763-4769|共7页
  • 作者单位

    Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aobaku, Sendai, Miyagi 980-8577, Japan;

    Institute for Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aobaku, Sendai, Miyagi 980-8577, Japan;

    Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aobaku, Sendai, Miyagi 980-8577, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A2. Micro-pulling-down method; A2. Growth from melt; A3. Single crystal growth; B1. Oxide materials;

    机译:A2。微下拉法;A2。从熔体中生长;A3。单晶生长;B1。氧化物材料;

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