Photoluminescence from (0001) GaN grown by the acidic ammonothermal technique

Katsushi Fujii; Gakuyo Fujimoto; Takenari Goto; Takafumi Yao; Yuji Kagamitani; Naruhiro Hoshino; Dirk Ehrentraut; Tsuguo Fukuda

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Photoluminescence from (0001) GaN grown by the acidic ammonothermal technique

机译：酸性氨热技术生长的（0001）GaN的光致发光

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We report the observation of two emissions from the (0001) face of GaN grown by the acidic ammonothermal method, which appears rather unusual. Excitonic emission at 3.357 eV (called Y4) by photoluminescence was observed which is possibly due to an exciton

机译：我们报告观察到通过酸性氨热法生长的GaN（0001）面的两种发射，这看起来很不寻常。观察到通过光致发光在3.357 eV处产生的激子发射（称为Y4），这可能是由于激子引起的

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来源
《Journal of Crystal Growth》 |2008年第5期|p.896-899|共4页
作者
Katsushi Fujii; Gakuyo Fujimoto; Takenari Goto; Takafumi Yao; Yuji Kagamitani; Naruhiro Hoshino; Dirk Ehrentraut; Tsuguo Fukuda;
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作者单位

Center for Interdisciplinary Research, Tohoku University, Aramaki aza Aoba 6-3, Aoba-ku, Sendai 980-8578, Japan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. Optical properties; A2. Ammonothermal crystal growth; B1. Gallium nitride;

机译：A1。光学性能;A2。氨热晶体生长;B1。氮化镓;

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专利

1. Near band-edge 3.357 eV emission of Ga-face (0001) GaN grown by ammonothermal method [J] . Katsushi Fujii, Gakuyo Fujimoto, Takenari Goto, Physica status solidi . 2007,第12期

机译：氨热法生长的Ga面（0001）GaN的近能带边缘3.357 eV发射
2. Electronic and optical characteristics of an m-plane GaN single crystal grown by hydride vapor phase epitaxy on a GaN seed synthesized by the ammonothermal method using an acidic mineralizer [J] . Kojima Kazunobu, Tsukada Yusuke, Furukawa Erika, Japanese journal of applied physics . 2016,第5S期

机译：通过使用酸性矿化剂通过氨热法合成的GaN种子上的氢化物气相外延生长的m面GaN单晶的电子和光学特性
3. N-face (0001) GaN/InN/GaN double heterostructures emitting near-infrared photoluminescence grown by metalorganic vapor phase epitaxy [J] . Akasaka Tetsuya, Schied Monika, Kumakura Kazuhide Applied physics express . 2018,第8期

机译：金属有机气相外延生长的N面（0001）GaN / InN / GaN双异质结构发射近红外光致发光
4. High quality bulk GaN crystal grown by acidic ammonothermal method [C] . Quanxi Bao, Makoto Saito, Kouhei Kurimoto, 2016 Compound Semiconductor Week Includes 28th International Conference on Indium Phosphide amp; Related Materials amp; 43rd International Symposium on Compound Semiconductors . 2016

机译：酸性氨热法生长的高质量块状GaN晶体
5. Determination via luminescence spectroscopy and x-ray diffraction of the strain and composition of GaN and Al(x)Ga(1-x)N thin films grown on 6H-SiC(0001) substrates. [D] . Perry, William George. 1997

机译：通过发光光谱和X射线衍射测定在6H-SiC（0001）衬底上生长的GaN和Al（x）Ga（1-x）N薄膜的应变和组成。
6. The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study [O] . Andrian V. Kuchuk, Serhii Kryvyi, Petro M. Lytvyn, 2016

机译：在原始GaN（0001）衬底上生长的GaN / AlN超晶格中应变弛豫的特殊性：XRD和AFM的比较研究
7. Contactless electroreflectance of algan/gan heterostructures deposited on c-, a-, m-, and (20.1)-plane gan bulk substrates grown by ammonothermal method [O] . Kudrawiec R., Rudzinski M., Gladysiewicz M., 2011

机译：通过氨热法生长在c，a，m和（20.1）平面gan本体衬底上沉积的algan / gan异质结构的非接触电反射

Photoluminescence from (0001) GaN grown by the acidic ammonothermal technique

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