Determination of dislocation density in MOVPE grown GaN layers using KOH defect etching

Peter J. Wellmann; Sakwe A. Sakwe; Felix Oehlschlaeger; Veit Hoffmann; Ute Zeimer; Arne Knauer

首页> 外文期刊>Journal of Crystal Growth >Determination of dislocation density in MOVPE grown GaN layers using KOH defect etching

【24h】

Determination of dislocation density in MOVPE grown GaN layers using KOH defect etching

机译：使用KOH缺陷蚀刻确定MOVPE生长的GaN层中的位错密度

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

We report on molten KOH-based defect etching of GaN epitaxial layers for the quantitative determination of the dislocation density. Etching process parameters were established at 450℃ that are suitable to reveal threading edge and threading screw dislocat

机译：我们报告了氮化镓外延层的基于熔融KOH的缺陷蚀刻，用于定量确定位错密度。在450℃设定蚀刻工艺参数，以揭示穿线边缘和穿线螺丝的错位。

著录项

来源
《Journal of Crystal Growth》 |2008年第5期|p.955-958|共4页
作者
Peter J. Wellmann; Sakwe A. Sakwe; Felix Oehlschlaeger; Veit Hoffmann; Ute Zeimer; Arne Knauer;
展开▼
作者单位

Institute of Materials Science 6, University of Erlangen-Nuernberg, Martens-Street 7, D-91058 Erlangen, Germany;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. Defect etching; B1. GaN; B1. KOH;

机译：A1。缺陷蚀刻;B1。氮化镓;B1。酸值;

相似文献

外文文献
中文文献
专利

1. Dislocation density investigation on MOCVD-grown GaN epitaxial layers using wet and dry defect selective etching [J] . Akhilesh Pandey, Brajesh S. Yadav, D. V. Sridhara Rao, Applied Physics . 2016,第6期

机译：利用湿法和干法缺陷选择性刻蚀研究MOCVD生长的GaN外延层的位错密度
2. A new method of reducing dislocation density in GaN layer grown on sapphire substrate by MOVPE [J] . S.Sakai, T.Wang, Y.Morishima Journal of Crystal Growth . 2000,第期

机译：MOVPE降低蓝宝石衬底上生长的GaN层中位错密度的新方法
3. Reduction of strain and dislocation defects in GaN layers grown on Si substrate by MOCVD using a substrate defect engineering technique [J] . M. Jamil, Eric Irissou, J. R. Grandusky, Physica Status Solidi. C, Conferences and critical reviews . 2006,第6期

机译：使用衬底缺陷工程技术通过MOCVD减少在Si衬底上生长的GaN层中的应变和位错缺陷
4. Determination of dislocation density in epitaxially grown GaN using an HCl etching process [C] . F. Habel, M. Seyboth International conference on nitride semiconductors . 2003

机译：使用HCl蚀刻工艺确定外延生长的GaN中位错密度的测定
5. Determination of core structure periodicity and point defect density along dislocations. [D] . Koch, Christoph Tobias. 2002

机译：确定核心结构的周期性和沿位错的点缺陷密度。
6. Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs [O] . Huan-Yu Shih, Makoto Shiojiri, Ching-Hsiang Chen, -1

机译：接近无应变的GaN兼容缓冲层上GaN外延层中的超低穿线位错密度及其在异质外延LED中的应用
7. Reduction of dislocation density and dislocation analysis of MOVPE grown GaN layers [O] . Habel Frank, Seyboth Matthias 2004

机译：降低MOVPE生长的GaN层的位错密度和位错分析
8. MOCVD Growth and Etching of N-Type GaN Layers on HPVE-Grown Templates and Free-Standing GaN Substrates [R] . Weyher, J. L. 2005

机译：在HpVE生长的模板和自支撑GaN衬底上的N型GaN层的mOCVD生长和蚀刻

Determination of dislocation density in MOVPE grown GaN layers using KOH defect etching

摘要

著录项

相似文献

相关主题

期刊订阅