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首页> 外文期刊>Journal of Crystal Growth >Lateral incorporation of vacancies in Czochralski silicon crystals
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Lateral incorporation of vacancies in Czochralski silicon crystals

机译：切克劳斯基硅晶体中的空位横向结合

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摘要

Silicon crystals grown by the Czochralski process typically contain many structural imperfections termed microdefects. The formation of microdefects requires an abundance of one of the intrinsic point defect species of silicon, vacancies or self-interstitials. The distribution of microdefects in a growing Czochralski crystal is influenced by its temperature field and the boundary conditions defined by its surfaces. This paper addresses the effects of the lateral surface on the defect dynamics in a growing crystal in which both the intrinsic point defect species are in comparable and low concentrations, away from the lateral surface, at higher temperatures near the melt/crystal interface. Under such conditions, a moderate vacancy supersaturation develops in the vicinity of the lateral surface leading to the formation of oxygen clusters and small voids, at lower temperatures. The vacancy incorporation near the lateral surface is driven by an interplay among the Frenkel reaction, the diffusion of the intrinsic point defects, and their convection.
机译：通过直拉法生长的硅晶体通常包含许多结构缺陷，称为微缺陷。微缺陷的形成需要硅，空位或自填隙性的本征点缺陷物种之一的丰度。在生长的直拉晶体中，微缺陷的分布受其温度场和由其表面限定的边界条件的影响。本文研究了在生长晶体中侧面表面对缺陷动力学的影响，在该晶体中，固有点缺陷物质在熔体/晶体界面附近较高的温度下都远离侧面，处于可比较的低浓度。在这种条件下，在较低的温度下，在侧面附近会出现适度的空位过饱和，从而导致氧簇和小空隙的形成。 Frenkel反应，本征点缺陷的扩散及其对流之间的相互作用驱动着靠近侧面的空位结合。

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