...
首页> 外文期刊>Journal of Crystal Growth >Investigation of As-doped ZnO films synthesized via thermal annealing of ZnSe/GaAs heterostructures
【24h】

Investigation of As-doped ZnO films synthesized via thermal annealing of ZnSe/GaAs heterostructures

机译:ZnSe / GaAs异质结构热退火合成As掺杂ZnO薄膜的研究

获取原文
获取原文并翻译 | 示例
           

摘要

We synthesized ZnO films via oxidative annealing of ZnSe/GaAs heterostructures and investigated their structural and optical properties. Films were polycrystalline, c-axis oriented and exhibited superior optical properties. In addition, we detected nanometer-size As clusters into the ZnO film and a Ga_xO_y layer at the ZnO/GaAs interface. Formation of an interfacial layer can prevent use of this technique for p-type doping and complicates identification of the origin of p-type response in the annealed ZnO/GaAs heterostructures.
机译:我们通过ZnSe / GaAs异质结构的氧化退火合成了ZnO薄膜,并研究了其结构和光学性质。薄膜是多晶的,c轴取向,并显示出优异的光学性能。此外,我们检测到纳米尺寸的As团簇进入ZnO膜和ZnO / GaAs界面处的Ga_xO_y层。界面层的形成可以阻止将该技术用于p型掺杂,并使退火ZnO / GaAs异质结构中p型响应的起源变得复杂。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号