Propagation of misfit dislocations from AlN/Si interface into Si

Z. Liliental-Weber; R.L. Maltez; J. Xie; H. Morkoc

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Propagation of misfit dislocations from AlN/Si interface into Si

机译：AlN / Si界面错配位错向Si的传播

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A substantial improvement of the structural quality of GaN/AlN grown on He implanted Si has been described. Many misfit dislocations were redirected from the Al/Si interface and propagated to the Si substrate due to the formation of He bubbles in the substrate. Growth temperature of GaN/AlN was chosen to be the annealing temperature necessary for He bubble formation. The dependence on the He fluence, distance of He bubbles from the Si surface and cleaning procedure of the Si before growth have been described. The structural perfection of the GaN/AlN layers was compared to the layers grown on un-implanted Si.

机译：已经描述了在He注入的Si上生长的GaN / AlN的结构质量的显着改善。由于在衬底中形成了He气泡，许多失配位错从Al / Si界面重新定向并传播到Si衬底。选择GaN / AlN的生长温度作为形成He气泡所需的退火温度。已经描述了对He能量密度，He气泡距Si表面的距离以及生长前Si的清洗程序的依赖性。将GaN / AlN层的结构完善性与未注入Si上生长的层进行了比较。

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来源
《Journal of Crystal Growth》 |2008年第17期|p.3917-3923|共7页
作者
Z. Liliental-Weber; R.L. Maltez; J. Xie; H. Morkoc;
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作者单位

Materials Sciences Division, Lawrence Berkeley National Laboratory, MS 62/203, 1 Cyclotron Road, Berkeley, CA 94720, USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. TEM; A1. Structural perfection; A1. Propagation of misfit dislocations; B1. GaN/AlN/Si interfaces;

机译：A1。 TEM;A1。结构完善;A1。错位错位的传播;B1。 GaN / AlN / Si界面;

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Propagation of misfit dislocations from AlN/Si interface into Si

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