Free-standing zinc-blende (cubic) GaN layers and substrates

S.V. Novikov; N.M. Stanton; R.P. Campion; C.T. Foxon; A.J. Kent

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Free-standing zinc-blende (cubic) GaN layers and substrates

机译：独立式闪锌矿（立方）GaN层和衬底

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It has been demonstrated that it is possible to grow by molecular beam epitaxy bulk free-standing zinc-blende (cubic) GaN layers. Such layers have potential applications as lattice matched substrates for growth of non-polar cubic GaN device structures of improved performance. We present the data from characterisation measurements that confirm the cubic nature of the GaN crystals and show that the fraction of the hexagonal material is not more than about 10% in the best 50 μm thick free-standing GaN samples. Our research is aimed at increasing the size of the free-standing cubic GaN layers in order to make this technology suitable for the commercial production of substrates and we have now demonstrated the growth of 100 μm thick, 2-in diameter GaN substrates.

机译：已经证明，可以通过分子束外延块状自支撑的闪锌矿（立方）GaN层来生长。这样的层具有潜在的应用作为晶格匹配衬底，用于生长具有改进性能的非极性立方GaN器件结构。我们提供了来自表征测量的数据，这些数据证实了GaN晶体的立方性质，并表明在最佳的50μm厚的自立式GaN样品中，六角形材料的比例不超过约10％。我们的研究旨在增加独立式立方GaN层的尺寸，以使该技术适用于衬底的商业化生产，现在我们已经证明了100μm厚，2直径GaN衬底的增长。

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来源
《Journal of Crystal Growth》 |2008年第17期|p.3964-3967|共4页
作者
S.V. Novikov; N.M. Stanton; R.P. Campion; C.T. Foxon; A.J. Kent;
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作者单位

School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. Substrates; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting Ⅲ-Ⅴ materials;

机译：A1。基材;A3。分子束外延;B1。氮化物;B2。半导体Ⅲ-Ⅴ材料;

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专利

1. Growth and characterization of free-standing zinc-blende (cubic) GaN layers and substrates [J] . S V Novikov, N M Stanton, R P Campion, Semiconductor science and technology . 2008,第1期

机译：独立式共混锌（GaN）层和衬底的生长和表征
2. Free-standing zinc-blende (cubic) GaN substrates grown by a molecular beans epitaxy process [J] . Foxon CT, Novikov SV, Stanton NM, Physica status solidi, B. Basic research . 2008,第5期

机译：通过分子豆外延工艺生长的自立共混锌（立方）GaN衬底
3. Growth and characterization of free-standing zinc-blende GaN layers and substrates [J] . S. V. Novikov, C. T. Foxon, A. J. Kent Physica status solidi . 2010,第6期

机译：独立式混合锌氮化镓层和衬底的生长和表征
4. Free-standing zinc-blende (cubic) GaN substrates grown by a molecular beam epitaxy process [C] . C. T. Foxon, S. V. Novikov, N. M. Stanton, International Conference of Nitride Semiconductors . 2008

机译：通过分子束外延过程种植的独立锌 - 闪烁（立方）GaN基材
5. Multilayer barrier films comprising nitrogen spacers between free-standing barrier layers. [D] . Granstrom, Jimmy Erik. 2010

机译：在独立的阻挡层之间包含氮间隔物的多层阻挡膜。
6. X-ray detection with zinc-blende (cubic) GaN Schottky diodes [O] . T. Gohil, J. Whale, G. Lioliou, -1

机译：闪锌矿（立方）GaN肖特基二极管的X射线检测
7. Doping of free-standing zinc-blende GaN layers grown by molecular beam epitaxy [O] . Novikov S.V., Powell R.E. L., Staddon C.R., 2014

机译：通过分子束外延生长的自支撑掺锌混合GaN层的掺杂
8. MOCVD Growth and Etching of N-Type GaN Layers on HPVE-Grown Templates and Free-Standing GaN Substrates [R] . Weyher, J. L. 2005

机译：在HpVE生长的模板和自支撑GaN衬底上的N型GaN层的mOCVD生长和蚀刻

Free-standing zinc-blende (cubic) GaN layers and substrates

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