Temperature dependence of La_2Hf_2O_7 thin films growth on Si(001) substrates by pulsed laser deposition

Feng Wei; Hailing Tu; Yi Wang; Shoujing Yue; Jun Du

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Temperature dependence of La_2Hf_2O_7 thin films growth on Si(001) substrates by pulsed laser deposition

机译：脉冲激光沉积在Si（001）衬底上生长La_2Hf_2O_7薄膜的温度依赖性

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摘要

La_2Hf_2O_7 (LHO) films have been grown on Si(001) substrates using an ultrahigh vacuum pulsed laser deposition (PLD) system at different temperatures. Structure characterization shows that the epitaxy growth of LHO films has obvious temperature dependence. The epitaxy growth of LHO films is observed over 780℃ and the predominant orientation is (001)_(LHO)||(001)_(Si) and [110]_(LHO)||[110]_(Si), indicating a remarkable tendency of cube-on-cube epitaxy. The high-resolution transmission electron microscopy (HRTEM) results illustrate that the LHO film deposited at 780 ℃ is in pyrochlore phase and the interface between LHO and substrate is ultimately clean.

机译：La_2Hf_2O_7（LHO）膜已在不同温度下使用超高真空脉冲激光沉积（PLD）系统在Si（001）衬底上生长。结构表征表明，LHO薄膜的外延生长具有明显的温度依赖性。在780℃以上观察到LHO膜的外延生长，主要取向为（001）_（LHO）|||（001）_（Si）和[110] _（LHO）|| [110] _（Si），表示立方对立方外延的显着趋势。高分辨率透射电子显微镜（HRTEM）结果表明，在780℃下沉积的LHO膜处于烧绿石相，LHO与基材之间的界面最终干净。

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来源
《Journal of Crystal Growth》 |2008年第18期|p.4065-4068|共4页
作者
Feng Wei; Hailing Tu; Yi Wang; Shoujing Yue; Jun Du;
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作者单位

Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, 2 Xinjiekouwai Street, Beijing 100088, People's Republic of China;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. Reflection high-energy electron diffraction; A1. X-ray diffraction; A3. Laser epitaxy; B2. Dielectric materials;

机译：A1。反射高能电子衍射;A1。 X射线衍射;A3。激光外延;B2。介电材料;

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Temperature dependence of La_2Hf_2O_7 thin films growth on Si(001) substrates by pulsed laser deposition

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