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首页> 外文期刊>Journal of Crystal Growth >An integrated model for halide chemical vapor deposition of silicon carbide epitaxial films
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An integrated model for halide chemical vapor deposition of silicon carbide epitaxial films

机译：碳化硅外延膜卤化物化学气相沉积的集成模型

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Halide chemical vapor deposition emerges as a potent technique for growing silicon carbide epitaxial layers with a high deposition rate in the range of 50-300 μm/h. Experimental studies suggest that the gas composition in the reactor has profound influence on the deposition rate, the quality, and the properties of the as-deposited films. In this study, a comprehensive model was developed for halide chemical vapor deposition process including gas dynamics, heat and mass transfer, gas phase and surface chemistry, and radio-frequency induction heating. Numerical simulations of the deposition process in a horizontal hot-wall reactor using silicon tetrachloride, propane, and hydrogen as precursors were performed over a wide range of operational parameters to quantify the effects of deposition temperature, precursor flow rate, and reactor configuration. Special attention was directed to the etching of silicon carbide films by hydrogen chloride and its impact on the film deposition rate at different processing conditions. Improved gas delivery method was proposed for controlling the formation of hydrogen chloride and the associated etching effect.
机译：卤化物化学气相沉积作为一种有效的技术而出现，可用于以50-300μm/ h的高沉积速率生长碳化硅外延层。实验研究表明，反应器中的气体组成对沉积速率，沉积质量和沉积薄膜的性能有深远的影响。在这项研究中，开发了一个卤化物化学气相沉积过程的综合模型，包括气体动力学，传热和传质，气相和表面化学以及射频感应加热。在广泛的运行参数范围内，对使用四氯化硅，丙烷和氢气作为前体的卧式热壁反应器中的沉积过程进行了数值模拟，以量化沉积温度，前体流速和反应器配置的影响。特别注意的是通过氯化氢蚀刻碳化硅膜及其在不同处理条件下对成膜速率的影响。提出了一种改进的气体输送方法，以控制氯化氢的形成和相关的蚀刻效果。

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