...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Crystal Growth >Process Optimization For The Effective Reduction Of Threading Dislocations In Movpe Grown Gan Using In Situ Deposited Sin_x Masks
【24h】

Process Optimization For The Effective Reduction Of Threading Dislocations In Movpe Grown Gan Using In Situ Deposited Sin_x Masks

机译：使用原位沉积Sin_x掩模有效减少Movpe长大的Gan中的螺纹位错的工艺优化

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In this study the in situ deposition of SiN_x masks by metalorganic vapor phase epitaxy (MOVPE) has been optimized to achieve c-plane oriented GaN layers on sapphire with a dislocation density < 2×10~8 cm~(-2). The defect termination was found to be most efficient if the SiN_x is located after the growth of 100 nm GaN, whereas deposited directly on the AlN nucleation it was less efficient but yielded highly compressively strained layers indicated by a donor bound exciton peak position of 3.493 eV in photoluminescence (13 K). Furthermore we observed by in situ reflectometry that a higher deposition temperature during the silane treatment was strongly increasing the surface roughening yielding a faster coalescence during the GaN overgrowth but finally influencing the defect termination negatively. In terms of lateral overgrowth a high Ⅴ/Ⅲ ratio (2D growth mode) was most efficient in terms of defect reduction, whereas a 3D-2D-process at lower Ⅴ/Ⅲ ratio yielded much faster overgrowth but influenced the defect termination negatively.
机译：在这项研究中，通过金属有机气相外延（MOVPE）原位沉积SiN_x掩模已得到优化，以在蓝宝石上实现位错密度<2×10〜8 cm〜（-2）的c面取向GaN层。如果在100 nm GaN的生长之后定位SiN_x，则发现缺陷终止是最有效的，而直接沉积在AlN形核上则效率较低，但会产生高压缩应变层，由供体结合的激子峰位置为3.493 eV表示在光致发光（13 K）中。此外，我们通过原位反射法观察到，在硅烷处理期间较高的沉积温度会极大地增加表面粗糙度，从而在GaN过度生长期间产生更快的聚结，但最终会对缺陷终止产生负面影响。就横向过度生长而言，高Ⅴ/Ⅲ比（2D生长模式）在减少缺陷方面最有效，而较低Ⅴ/Ⅲ比的3D-2D工艺产生了更快的过度成长，但对缺陷终止产生了负面影响。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号