Type Ⅱ Gaas_xsb_(1-x)/inas (x < 0.35) Heterojunction Grown By Movpe Near A Miscibility Gap Of The Ternary Solid Solution

K.D. Moiseev; V.V. Romanov; T.I. Voronina; T.S. Lagunova; M.P. Mikhailova; Yu.P. Yakovlev

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Type Ⅱ Gaas_xsb_(1-x)/inas (x < 0.35) Heterojunction Grown By Movpe Near A Miscibility Gap Of The Ternary Solid Solution

机译：Movpe在三元固溶体的可混溶间隙附近生长的Ⅱ型Gaas_xsb_（1-x）/ inas（x <0.35）异质结

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Ternary GaAs_xSb_(1-x) solid solutions in the composition range 0.05 < x < 0.35 have been grown on InAs(100) substrates by the MOVPE method. The photoluminescence in epitaxial layers and the magnetotransport in single p-GaAsSb/p-InAs heterostructures have been studied for the first time. A new approach to calculation of the composition dependence of the band diagram of the GaSbAs solid solution at low temperatures has been suggested. It is shown that the GaAs_xSb_(1-x)/InAs heterojunction is a type Ⅱ broken-gap heterojunction in the composition range x < 0.17.

机译：通过MOVPE方法在InAs（100）衬底上生长了成分范围0.05

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来源
《Journal of Crystal Growth》 |2008年第23期|p.4846-4849|共4页
作者
K.D. Moiseev; V.V. Romanov; T.I. Voronina; T.S. Lagunova; M.P. Mikhailova; Yu.P. Yakovlev;
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作者单位

A.F.Ioffe Physico-Technical Institute, RAS, Politekhnicheskaya 26, 194021 St. Petersburg, Russia;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
a3. metalorganic vapor phase epitaxy; b1. antimonides; b2. semiconducting Ⅲ-Ⅴ materials;

机译：a3。金属有机气相外延;b1。锑;b2。半导体Ⅲ-Ⅴ材料;

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1. Type II broken-gap GaSb1-x Asx/InAs heterojunction (x < 0.15): Evolution of the band diagram for the ternary solid solution [J] . Romanov V, Moiseev K, Voronina T, Semiconductors . 2008,第12期

机译：II型断裂间隙GaSb1-x Asx / InAs异质结（x <0.15）：三元固溶体的能带图演化
2. Optical and Structural Properties of InGaAsP Miscibility-Gap Solid Solutions Grown by MOVPE on GaAs(001) Substrates [J] . L. S. Vavilova, D. A. Vinokurov, V. A. Kapitonov, Semiconductors . 2003,第9期

机译：MOVPE在GaAs（001）衬底上生长的InGaAsP混溶间隙固溶体的光学和结构性质
3. Thermodynamic modelling of miscibility in (InAs)_x(GaAs)_(1-x) solid solutions [J] . Adhikari J. Phase Transitions . 2013,第5期

机译：（InAs）_x（GaAs）_（1-x）固溶体中混溶性的热力学建模
4. Suppression of miscibility gaps in ternary III-V nanowires grown at high supersaturations [C] . Theo Jean, V. G. Dubrovskii 2018 International Conference Laser Optics . 2018

机译：抑制在高过饱和度下生长的三元III-V纳米线的混溶间隙
5. Electrical properties and band diagram of InSb-InAs nanowire type-III heterojunctions. [D] . Chen, Chao-Yang Michael. 2013

机译：InSb-InAs纳米线III型异质结的电学性质和能带图。
6. Closed-Loop Miscibility Gap and Quantitative Tie-Lines in Ternary Membranes Containing Diphytanoyl PC [O] . Sarah L. Veatch, Klaus Gawrisch, Sarah L. Keller 2006

机译：含双植烷酰基PC的三元膜中的闭环混溶间隙和定量关系线
7. InP based double heterojunction bipolar transistorwith carbon doped GaAsSb:C base grown by LP-MOVPE [O] . Neumann S., Prost W., Tegude F.-J. 2003

机译：通过LP-MOVPE生长的具有碳掺杂的GaAsSb：C基的InP基双异质结双极晶体管
8. Conduction- and Valence-Band Energies in Bulk InAs(1-x)Sb(x) and Type II InAs(1-x) Sb(x)/InAs Strained-Layer Superlattices. [R] . Lin, Y., Wang, D., Donetsky, D., 2013

机译：体Inas（1-x）sb（x）和II型Inas（1-x）sb（x）/ Inas应变层超晶格中的导带和价带能量。

Type Ⅱ Gaas_xsb_(1-x)/inas (x < 0.35) Heterojunction Grown By Movpe Near A Miscibility Gap Of The Ternary Solid Solution

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