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首页> 外文期刊>Journal of Crystal Growth >Alternating Magnetic Field-assisted Crystallization Of Si Films Without Metal Catalyst
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Alternating Magnetic Field-assisted Crystallization Of Si Films Without Metal Catalyst

机译：无金属催化剂的硅膜的交替磁场辅助结晶

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摘要

Low-temperature crystallization of amorphous Si (a-Si) has been investigated by employing alternating magnetic field. Even at 430 ℃, with the aid of magnetic field that was applied in the perpendicular direction to a-Si films without any metal catalyst and electrical contact, crystalline structure of the Si films was changed from amorphous to polycrystalline. The evaluated crystal fraction of the polycrystalline Si (poly-Si) was about 90% and twin boundaries were observed in the poly-Si films. Thin-film transistors using poly-Si fabricated by applying the alternating magnetic field showed superior drain current uniformity of below ±7% due to the smooth grain boundary without protrusion. The method using alternating magnetic field represents an excellent approach to the fabrication of uniform switching electronics for flat panel displays.
机译：已经通过采用交变磁场研究了非晶硅（a-Si）的低温结晶。即使在430℃，借助垂直于无任何金属催化剂和电接触的a-Si膜施加的磁场，Si膜的晶体结构也从非晶变为多晶。所评估的多晶硅（poly-Si）的晶体分数为约90％，并且在多晶硅膜中观察到孪晶边界。通过施加交变磁场而制造的使用多晶硅的薄膜晶体管由于没有突起而具有平滑的晶界，因此显示出低于±7％的优异漏极电流均匀性。使用交变磁场的方法代表了制造用于平板显示器的均匀开关电子器件的极好方法。

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