Domain Configuration And Phase Transition For Batio_3 Thin Films On Tensile Si Substrates

Liang Qiao; Xiaofang Bi

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Domain Configuration And Phase Transition For Batio_3 Thin Films On Tensile Si Substrates

机译：拉伸Si衬底上Batio_3薄膜的畴结构和相变

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Ferroelectric BaTiO_3 films with different thicknesses were deposited on "tensile" Si substrates buffered with 100 nm LaNiO_3 by radio frequency sputtering. X-ray diffraction measurements demonstrate a high (001)-orientation and in-plane tensile strain in all BaTiO_3 films. With increasing BaTiO_3 thickness from 200 to 400 nm, the in-plane lattice constant is decreased and out-of-plane lattice constant increased. High-resolution transmission electron microscopy observations reveal two different in-plane lattice constants in the adjacent twinning domains, thus confirming that the BaTiO_3 film is under an in-plane polarization state. The temperature-dependent dielectric measurement results show that the ferroelectric to paraelectric phase transition temperature is enhanced for both BaTiO_3 films. However, the enhanced phase transition temperature shows a decrease tendency from 200 to 400 nm BaTiO_3, which coincides with the change of lattice constants and can also be interpreted as the result of the internal strain relaxation.

机译：通过射频溅射将具有不同厚度的铁电BaTiO_3膜沉积在缓冲有100 nm LaNiO_3的“拉伸” Si衬底上。 X射线衍射测量表明，所有BaTiO_3薄膜均具有较高的（001）取向和面内拉伸应变。随着BaTiO_3厚度从200纳米增加到400纳米，面内晶格常数减小，面外晶格常数增大。高分辨率透射电子显微镜观察揭示了在相邻的孪晶畴中的两个不同的面内晶格常数，从而证实了BaTiO_3膜处于面内极化状态。随温度变化的介电测量结果表明，BaTiO_3薄膜的铁电至顺电相变温度均提高。然而，相变温度的升高显示出BaTiO_3从200 nm减小到400 nm的趋势，这与晶格常数的变化一致，也可以解释为内部应变松弛的结果。

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来源
《Journal of Crystal Growth》 |2008年第24期|p.5327-5330|共4页
作者
Liang Qiao; Xiaofang Bi;
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作者单位

Key Laboratory of Aerospace Materials and Performance (Ministry of education), School of Materials Science and Engineering, Beijing University of Aeronautics and Astronautics, Beijing, 100191, China;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
a1. crystal structure; a3. physical vapor deposition processes; b1. barium compounds; b1. rare earth compounds; b2. ferroelectric materials;

机译：a1。晶体结构;a3。物理气相沉积过程;b1。钡化合物;b1。稀土化合物;b2。铁电材料;

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1. Comparative study of phase transitions in BaTiO_3 thin films grown on (001)- and (110)-oriented SrTiO_3 substrate [J] . Shimizu T., Suwama D., Taniguchi H., Journal of Physics. Condensed Matter . 2013,第13期

机译：在（001）和（110）取向的SrTiO_3衬底上生长的BaTiO_3薄膜中相变的比较研究
2. Origin of compressive strain and phase transition characteristics of thin BaTiO_3 film grown on LaNiO_3/Si substrate [J] . Liang Qiao, Xiaofang Bi Physica status solidi . 2010,第11期

机译：LaNiO_3 / Si衬底上生长的BaTiO_3薄膜的压缩应变起源和相变特性
3. Dielectric response and structure of in-plane tensile strained BaTiO_3 thin films grown on the LaNiO_3 buffered Si substrate [J] . Liang Qiao, Xiaofang Bi Applied Physics Letters . 2008,第6期

机译：LaNiO_3缓冲Si衬底上生长的面内拉伸应变BaTiO_3薄膜的介电响应和结构
4. Elastic Deformations during Phase Transition in Freestanding BaTiO_3 Thin Films [C] . Jaya P.Nair, Natalie Stavitski, Ilya Zon, Symposium on Perovskite Materials, Apr 1-5, 2002, San Francisco, California . 2002

机译：独立式BaTiO_3薄膜相变过程中的弹性变形
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Domain Configuration And Phase Transition For Batio_3 Thin Films On Tensile Si Substrates

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