Defect evolution during growth of SiC crystals

Ping Wu; Murugesu Yoganathan; Ilya Zwieback

首页> 外文期刊>Journal of Crystal Growth >Defect evolution during growth of SiC crystals

【24h】

Defect evolution during growth of SiC crystals

机译：SiC晶体生长过程中的缺陷演变

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

SiC single crystals grown by sublimation exhibit relatively high dislocation densities and often contain a network of slightly misoriented grains. In order to understand the evolution of dislocation structures and grain boundaries during growth, we studie

机译：通过升华生长的SiC单晶表现出相对较高的位错密度，并且通常包含略有取向错误的晶粒网络。为了了解生长过程中位错结构和晶界的演变，我们研究了

著录项

来源
《Journal of Crystal Growth》 |2008年第9期|p.1804-1809|共6页
作者
Ping Wu; Murugesu Yoganathan; Ilya Zwieback;
展开▼
作者单位

II-VI, Inc., WBG, 20 Chapin Road., Suite 1005, Pine Brook, NJ 07058, USA;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. defects; A2. single-crystal growth; B1. silicon carbide;

机译：A1。缺陷;A2。单晶生长;B1。碳化硅;

相似文献

外文文献
中文文献
专利

1. Reduction of Hollow Defects in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique on (1120) 6H-SiC Substrates [J] . Taro NISHIGUCHI, Yasuichi MASUDA, Satoru OHSHIMA, Japanese Journal of Applied Physics. Part 2, Letters . 2004,第4APt1期

机译：通过升华晶棒生长技术在（1120）6H-SiC衬底上生长的6H-SiC单晶中的空心缺陷的减少
2. Application of Defect Conversion Layer by Solution Growth for Reduction of TSDs in 4H-SiC Bulk Crystals by PVT Growth [J] . Naoyoshi Komatsu, Takeshi Mitani, Yuichiro Hayashi, Materials science forum . 2019,第期

机译：缺陷转化层通过PVT生长溶液生长在4H-SiC块状晶体中减少TSDS的应用
3. Growth of AIN bulk single crystals on 4H-SiC substrates and analyses of their structural quality and growth mode evolution [J] . R. R. Sumathi, R. U. Barz, A. M. Gigler, Physica status solidi . 2012,第3期

机译：AIN块状单晶在4H-SiC衬底上的生长及其结构质量和生长模式演变的分析
4. Multi-level Simulation Study of Crystal Growth and Defect Formation Processes in SiCMulti-level Simulation Study of Crystal Growth and Defect Formation Processes in SiC [C] . Hiromitsu Takaba, Ai Sagawa, Miki Sato, Silicon Carbide and Related Materials 2007 . 2009

机译：SiC中晶体生长和缺陷形成过程的多层次模拟研究SiC中晶体生长和缺陷形成过程的多层次模拟研究
5. Application of X-Ray Topographic Techniques to Investigate Defect Behavior in PVT-Grown 4H-SiC Crystals [D] . Yang, Yu. 2017

机译：X射线形貌技术在PVT生长4H-SiC晶体缺陷行为研究中的应用
6. Influence of Morphological Changes in a Source Material on the Growth Interface of 4H-SiC Single Crystals [O] . Matthias Arzig, Johannes Steiner, Michael Salamon, 2019

机译：源材料的形态变化对4H-SiC单晶生长界面的影响
7. Influence of the growth interface shape on the defect characteristics in the facet region of 4H-SiC single crystals [O] . Matthias Arzig, Michael Salamon, Ta Ching Hsiao, 2020

机译：生长界面形状对4H-SiC单晶的小区缺陷特性的影响

Defect evolution during growth of SiC crystals

摘要

著录项

相似文献

相关主题

期刊订阅