Growth and band gap of the filled tetrahedral semiconductor Li_3AlP_2

K. Kuriyama; J. Anzawa; K. Kushida

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Growth and band gap of the filled tetrahedral semiconductor Li_3AlP_2

机译：填充四面体半导体Li_3AlP_2的生长和带隙

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摘要

AlP-like Li_3AlP_2 crystallizes in an orthorhombic structure in contrast to cubic nitride semiconductors such as Li_3AlN_2 and Li_3GaN_2. Li_3AlP_2 can be viewed as the zincblende-like (Li_(0.5)Al_(0.5)P)~- lattice filled with He-like Li~+ ions at the emp

机译：与诸如Li_3AlN_2和Li_3GaN_2的立方氮化物半导体相反，类AlP的Li_3AlP_2以正交结构结晶。 Li_3AlP_2可以看作是在emp时充满He样Li〜+离子的闪锌矿状（Li_（0.5）Al_（0.5）P）〜-晶格

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来源
《Journal of Crystal Growth》 |2008年第9期|p.2298-2300|共3页
作者
K. Kuriyama; J. Anzawa; K. Kushida;
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作者单位

College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184-8584, Japan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. Characterization; A1. X-ray diffraction; A2. Growth from melt; B1. Phosphides; B2. Semiconducting ternary compounds;

机译：A1。表征;A1。 X射线衍射;A2。从熔体中生长;B1。磷化物;B2。半导体三元化合物;

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Growth and band gap of the filled tetrahedral semiconductor Li_3AlP_2

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