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首页> 外文期刊>Journal of Crystal Growth >On The Growth Of Tungsten Single Crystals Of High Structural Quality
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On The Growth Of Tungsten Single Crystals Of High Structural Quality

机译:高质量结构钨单晶的生长

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Techniques have been developed for growing W single crystals, which demonstrate an extremely low dislocation density and insignificant mosaic spread. The 6-8% deformation is found to be optimal to get large grains after recrystallization. The vacuum conditions are required for the crystal deformation by rolling, because they enable to avoid an oxidation of the crystal surface during deformation at high temperature. The block structure and the perfection of the crystals were controlled by the XRD technique and by anomalous transmission of the X-rays procedure. The dislocation density determined from diffraction data is close to the density values obtained from etch pits. The high-purity single crystals of low dislocation density and free of small-angle boundaries were produced.
机译:已经开发出用于生长W单晶的技术,其显示出极低的位错密度和可忽略的镶嵌扩展。发现6-8%的变形对于重结晶后获得大晶粒是最佳的。真空条件是通过滚动使晶体变形所必需的,因为它们能够避免在高温变形期间晶体表面的氧化。 XRD技术和X射线程序的异常透射控制了晶体的块状结构和晶体的完整性。由衍射数据确定的位错密度接近于从蚀刻坑获得的密度值。产生了具有低位错密度并且没有小角度边界的高纯度单晶。

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