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首页> 外文期刊>Journal of Crystal Growth >Electron Backscatter Diffraction Of A Ge Growth Tip From A Vertical Gradient Freeze Furnace
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Electron Backscatter Diffraction Of A Ge Growth Tip From A Vertical Gradient Freeze Furnace

机译：垂直梯度冻结炉中锗生长尖端的电子背散射衍射

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摘要

The growth-tip region of a high-purity 4.2-cm-diameter Ge boule grown using low-pressure Bridgman methods in a vertical gradient freeze furnace was sectioned and polished in preparation for scanning electron microscopy and was characterized using electron backscatter diffraction (EBSD). The boule had a characteristic conical tip region with cone angle of 40 of a right circular cylinder from which a section was taken along the boule longitudinal centerline with an approximate surface area of 4 cm2. The majority of this surface area was characterized using EBSD and an image collage was assembled for the tip region. The grain structure, grain boundary orientation, twin structure, and overall crystal growth direction were determined. A crystal growth direction of approximately < 1 1 2 > was observed, which was also identified as the growth direction of several prominent twins observed in the tip region. The grain structure of the tip region appeared to be controlled by the sidewall nucleation of a stray grain that competed for dominance during growth. Grain boundaries and triple grain junctions were identified as low-energy coincident-site-lattice (CSL) boundaries and junctions of the Σ3 and Σ9 types.
机译：将低压Bridgman方法在垂直梯度冷冻炉中生长的高纯度4.2厘米直径Ge晶锭的生长尖端区域进行切片和抛光，以准备进行扫描电子显微镜检查，并使用电子背散射衍射（EBSD）对其进行表征。晶锭具有典型的圆锥形尖端区域，该锥状尖端区域的圆锥角为直角圆柱体的40度，从该截面沿着晶锭的纵向中心线截取了大约4 cm2的表面积。使用EBSD对大部分表面积进行了表征，并为尖端区域组装了图像拼贴。确定了晶粒结构，晶界取向，孪晶结构和总体晶体生长方向。观察到大约<1 1 2>的晶体生长方向，这也被确定为在尖端区域中观察到的几个突出的孪晶的生长方向。顶端区域的晶粒结构似乎受杂散晶粒的侧壁成核作用控制，这些晶粒在生长过程中竞争优势。晶界和三重晶界交界处被确定为Σ3和Σ9类型的低能重合点晶格（CSL）界界和交界处。

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