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首页> 外文期刊>Journal of Crystal Growth >Growth Of C-oriented Zno Films On (0 0 1) Srtio_3 Substrates By Mocvd
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Growth Of C-oriented Zno Films On (0 0 1) Srtio_3 Substrates By Mocvd

机译：Mocvd在（0 0 1）Srtio_3基板上生长C取向的Zno膜

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摘要

The growth direction of ZnO thin films grown by metal-organic chemical vapor deposition (MOCVD) is modulated by pretreatment of (0 0 1) SrTiO_3 (STO) substrates. ZnO films show α-oriented smooth surface with epitaxial relationship of {0 0 1) ZnO//{1 1 0) STO on as-received STO, and c-axis columnar growth with <0 1 0> ZnO//(1 1 0) STO on etched STO, respectively. The orientation alteration of ZnO films is supposed to be caused by the change of STO surface polarity. In addition, the c-ZnO films exhibit an enhanced photoluminescence (PL) intensity due to the improved crystal quality, while the blueshift of PL peak is attributed to the smaller tensile strain. These results show that high quality c-ZnO, which is essential for electronic and optoelectronic device applications, can be grown on (0 0 1) STO by MOCVD.
机译：通过（0 0 1）SrTiO_3（STO）基板的预处理来调节通过金属有机化学气相沉积（MOCVD）生长的ZnO薄膜的生长方向。 ZnO薄膜在收到的STO上显示出具有{0 0 1）ZnO // {1 1 0）STO外延关系的α取向光滑表面，并且c轴柱状生长且<0 1 0> ZnO //（1 1 0）分别在蚀刻的STO上进行STO。 ZnO膜的取向变化被认为是由STO表面极性的变化引起的。另外，由于改善了晶体质量，c-ZnO薄膜显示出增强的光致发光（PL）强度，而PL峰的蓝移归因于较小的拉伸应变。这些结果表明，可以通过MOCVD在（0 0 1）STO上生长对电子和光电设备应用必不可少的高质量c-ZnO。

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