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首页> 外文期刊>Journal of Crystal Growth >Fabrication Of Epitaxial γ-al_2o_3 And Spinel Nial_2o_4 Films On Srtio_3 By Pulsed Laser Ablation
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Fabrication Of Epitaxial γ-al_2o_3 And Spinel Nial_2o_4 Films On Srtio_3 By Pulsed Laser Ablation

机译:脉冲激光烧蚀在Srtio_3上制备外延γ-al_2o_3和尖晶石Nial_2o_4膜

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摘要

Spinel γ-Al_2O_3 and NiAl_2O_4 thin films were grown on (001) SrTiO_3 substrates by pulsed laser deposition. The high quality of epitaxial growth and cube-on-cube orientation of the films were confirmed by X-ray diffraction and transmission electron microscopy. The growth of NiAl_2O_4 thin films is related to the reaction between sequentially deposited γ-Al_2O_3 and NiO layers. These films were grown using a unique "multi-target" approach.
机译:通过脉冲激光沉积在(001)SrTiO_3衬底上生长了尖晶石γ-Al_2O_3和NiAl_2O_4薄膜。通过X射线衍射和透射电子显微镜证实了薄膜的高品质的外延生长和立方立方取向。 NiAl_2O_4薄膜的生长与依次沉积的γ-Al_2O_3和NiO层之间的反应有关。这些电影是使用独特的“多目标”方法生长的。

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