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首页> 外文期刊>Journal of Crystal Growth >The high mobility InN film grown by MOCVD with GaN buffer layer
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The high mobility InN film grown by MOCVD with GaN buffer layer

机译：MOCVD生长的具有GaN缓冲层的高迁移率InN膜

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This paper reports the high mobility InN film grown by MOCVD with GaN buffer layer on sapphire substrates. Different buffer layers are used in our experiments. These buffer layers included the annealing sapphire substrate, the low-temperature GaN layer (LT-GaN), the high-temperature GaN layer (HT-GaN) and the complex buffer layer with HT-GaN on LT-GaN. The crystalline quality of the InN film is sensitive to the underlying buffer layer when the film is grown under the high effect Ⅴ/Ⅲ ratio condition. And the growth conditions are optimized in our system. We employed the three-step buffer layer with HT-GaN and LT-GaN on annealing sapphire. The mirror like layers on 2 in sapphire wafers was obtained. The structure, optical and electrical characteristics of InN was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), photoluminescence (PL) and IR optical absorption. The PL and the absorption studies of the materials reveal a marked energy band gaps structure around 0.70 eV, at room temperature. The uniformity of morphology and the electrical property of the grown InN film are markedly improved by using the complex buffer layer with HT-GaN and LT-GaN on the annealing sapphire. The InN film grown by this buffer layer has the carrier concentration of 3.9 x 10~(18)cm~(-3) and the Hall mobility of 939cm~2/Vs.
机译：本文报道了通过MOCVD在蓝宝石衬底上具有GaN缓冲层的高迁移率InN薄膜。我们的实验中使用了不同的缓冲层。这些缓冲层包括退火蓝宝石衬底，低温GaN层（LT-GaN），高温GaN层（HT-GaN）以及在LT-GaN上具有HT-GaN的复合缓冲层。 InN薄膜的晶体质量在有效的Ⅴ/Ⅲ比条件下生长时，对下面的缓冲层敏感。并且在我们的系统中优化了生长条件。我们在蓝宝石退火上采用了三步缓冲层，其中包含HT-GaN和LT-GaN。获得了蓝宝石晶片中2个上的镜面层。通过X射线衍射（XRD），扫描电子显微镜（SEM），原子力显微镜（AFM），光致发光（PL）和红外光吸收对InN的结构，光学和电学特性进行了研究。 PL和材料的吸收研究表明，在室温下，约0.70 eV处具有明显的能带隙结构。通过在退火蓝宝石上使用带有HT-GaN和LT-GaN的复合缓冲层，可以显着提高生长的InN膜的形貌均匀性和电性能。通过该缓冲层生长的InN膜的载流子浓度为3.9×10〜（18）cm〜（-3），霍尔迁移率为939cm〜2 / Vs。

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