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首页> 外文期刊>Journal of Crystal Growth >Structural and optical properties of near-UV LEDs grown on V-grooved sapphire substrates fabricated by wet etching
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Structural and optical properties of near-UV LEDs grown on V-grooved sapphire substrates fabricated by wet etching

机译：在通过湿法刻蚀制成的V槽蓝宝石衬底上生长的近紫外LED的结构和光学特性

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摘要

V-grooved sapphire substrates (VGSS) were fabricated by a simple wet etching process with SiO_2 stripe masks along < 1120 > orientation of the sapphire substrate and a mixed solution of H_2SO_4 and H_3PO_4. The growth of low-defect GaN template was optimized by two-step growth technique of metalorganic vapor deposition (MOCVD), resulting in the threading dislocation (TD) density of 2-4 x 10~7 cm~(-2) in the entire region of the GaN template. The epitaxial structure of near-UV light emitting diode (LED) was grown on the GaN templates on both the VGSS and the flat sapphire substrate (FSS) in order to compare the characteristics of their structural and optical properties. The internal quantum efficiency and the extraction efficiency of the LED structure grown on the VGSS were remarkably increased when compared to the conventional LED structure grown on the FSS. It seems to be attributed to the reduction in the TD density of the GaN template on the VGSS and the decrease in the number of times of total internal reflections of the light flux due to the V-grooved pattern, respectively. The increase in optical output power of the LED grown on the VGSS agreed well with the expected value based on the simulation of the commercial Light Tool program and temperature-dependent photoluminescence (PL) intensities.
机译：通过简单的湿法刻蚀工艺，使用SiO_2条纹掩模沿着蓝宝石衬底的<1120>方向以及H_2SO_4和H_3PO_4的混合溶液，制造出V型槽蓝宝石衬底（VGSS）。通过金属有机气相沉积（MOCVD）的两步生长技术优化了低缺陷GaN模板的生长，整个过程中的线错位（TD）密度为2-4 x 10〜7 cm〜（-2） GaN模板的区域。在VGSS和平面蓝宝石衬底（FSS）上的GaN模板上生长了近紫外发光二极管（LED）的外延结构，以比较其结构和光学特性。与在FSS上生长的常规LED结构相比，在VGSS上生长的LED结构的内部量子效率和提取效率显着提高。似乎分别归因于VGSS上的GaN模板的TD密度的降低和由于V槽图案导致的光束的全内反射次数的减少。在VGSS上生长的LED的光输出功率的增加与基于商业Light Tool程序的模拟和温度相关的光致发光（PL）强度的模拟的预期值非常吻合。

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