Homoepitaxial growth rate measurement using in situ reflectance anisotropy spectroscopy

Christian Kaspari; Markus Pristovsek; Wolfgang Richter

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Homoepitaxial growth rate measurement using in situ reflectance anisotropy spectroscopy

机译：利用原位反射各向异性光谱法测量同质外延生长速率

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摘要

We present a novel method to measure growth rates during homoepitaxy using reflectance anisotropy spectroscopy (RAS). We have grown Si and Zn doped as well as undoped GaAs and InP layers in MOVPE. The RAS signal at photon energies near the fundamental band gap shows an oscillatory behavior (Fabry-Perot-like oscillations) during growth whenever the doping concentration has been changed. The period of these oscillations can be directly related to the growth rate via the length of the optical path through the growing layer, while the amplitude of the oscillations correlates to the doping level contrast at the interface. We attribute these oscillations to the linear electro-optic effect (LEO) at the interface between two differently doped layers.

机译：我们提出了一种新的方法来使用反射各向异性光谱（RAS）来测量同质外延期间的增长率。我们已经在MOVPE中生长了掺杂Si和Zn以及未掺杂的GaAs和InP层。只要掺杂浓度发生变化，在基带隙附近的光子能量处的RAS信号就会在生长过程中显示出振荡行为（类似法布里-珀罗振荡）。这些振荡的周期可以通过穿过生长层的光路的长度与生长速率直接相关，而振荡的幅度与界面处的掺杂水平对比度相关。我们将这些振荡归因于两个不同掺杂层之间的界面处的线性电光效应（LEO）。

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来源
《Journal of Crystal Growth》 |2007年第1期|p.46-49|共4页
作者
Christian Kaspari; Markus Pristovsek; Wolfgang Richter;
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作者单位

Inst. fuer Festkoerperphysik, Technische Universitaet Berlin, Sekr. PN 6-1, Hardenbergstrasse 36, D-10623 Berlin, Germany;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. Doping; A1. Reflectance anisotropy spectroscopy; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting gallium arsenide; B2. Semiconducting Ⅲ-Ⅴ materials;

机译：A1。掺杂;A1。反射各向异性光谱;A3。金属有机气相外延;B2。半导体砷化镓;B2。半导体Ⅲ-Ⅴ材料;

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专利

1. In-situ monitoring of MOVPE growth with reflectance anisotropy spectroscopy in an industrial used multi wafer reactor [J] . C. Krahmer, M. Philippens, M. Schubert, Physica Status Solidi. C, Conferences and critical reviews . 2006,第3期

机译：在工业用多晶片反应器中利用反射率各向异性光谱技术原位监测MOVPE的生长
2. Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth [J] . A. Lastras-Martínez, J. Ortega-Gallegos, L. E. Guevara-Macías, APL Materials . 2014,第3期

机译：GaAs分子束外延同质外延生长的实时反射-差光谱
3. Development and control of MOVPE growth processes for devices using reflectance anisotropy spectroscopy and normalized reflectance [J] . Zorn M, Zettler JT Physica status solidi, B. Basic research . 2005,第13期

机译：使用反射率各向异性光谱和归一化反射率的设备MOVPE生长过程的开发和控制
4. In-situ monitoring of AlGaAs growth with time-resolved reflectance anisotropy spectroscopy and normalized reflectance by MOCVD [C] . Huawei Xu, Yongqiang Ning, Yugang Zeng, 1st International conference on frontiers of laser processing. . 2011

机译：利用时间分辨反射率各向异性光谱和MOCVD归一化反射率现场监测AlGaAs的生长
5. In-situ measurement of epithelial tissue optical properties: Development and implementation of diffuse reflectance spectroscopy techniques [D] . Wang, Quanzeng 2009

机译：上皮组织光学特性的原位测量：漫反射光谱技术的开发和实施
6. Doped or Quantum-Dot Layers as In Situ Etch-Stop Indicators for III/V Semiconductor Reactive Ion Etching (RIE) Using Reflectance Anisotropy Spectroscopy (RAS) [O] . Guilherme Sombrio, Emerson Oliveira, Johannes Strassner, 2021

机译：掺杂或量子点层作为使用反射各向异性光谱（RAS）的III / V半导体反应离子蚀刻（RIE）的原位蚀刻静止指示器
7. Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth [O] . A. Lastras-Martínez, J. Ortega-Gallegos, L. E. Guevara-Macías, 2014

机译：Gaas分子束外延同质外延生长的实时反射 - 差分光谱
8. In situ growth rate measurements by normal-incidence reflectance during MOVPE growth [R] . Hou, H. Q. , Breiland, W. G. , Hammons, B. E. , 1996

机译：通过mOVpE生长期间的垂直入射反射率测量原位生长速率

Homoepitaxial growth rate measurement using in situ reflectance anisotropy spectroscopy

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