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首页> 外文期刊>Journal of Crystal Growth >Reactor-scale uniformity of selective-area performance in InGaAsP system
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Reactor-scale uniformity of selective-area performance in InGaAsP system

机译：InGaAsP系统中选择区性能的反应堆规模均匀性

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Selective-area metal organic vapor phase epitaxy (SA-MOVPE) of InGaAsP-related semiconductors is one of the most important fabrication techniques for monolithically integrated optical devices. However, it has not been clarified how much the mask effect depends on the position of a wafer in a MOVPE reactor. Therefore, the uniformity of the mask effect in a reactor was investigated experimentally coupled with the simulation in both reactor scale and micrometer scale. As for the reactor-scale distributions of an InGaAsP layer, the measured profiles of the growth rate and composition were well-reproduced by the simulation that assumed the adsorption and the desorption of As and P species. As for the micro-scale distribution in the selective-area growth, the modulations of photoluminescence (PL) wavelength due to masks were dependent on the position of the substrate in the reactor. The reason was assumed to be that the surface reaction rate constant of a precursor had the distribution in the reactor, due to the concentration distribution of both precursors and reaction products.
机译：InGaAsP相关半导体的选择性区域金属有机气相外延（SA-MOVPE）是单片集成光学器件最重要的制造技术之一。然而，尚不清楚掩模效应在多大程度上取决于MOVPE反应器中晶片的位置。因此，在反应器规模和千分尺规模上，通过实验与模拟相结合，对掩膜效应的均匀性进行了实验研究。关于InGaAsP层的反应器规模分布，通过假设As和P物质的吸附和解吸的模拟很好地再现了生长速率和组成的测量曲线。至于选择性区域生长中的微尺度分布，由于掩模引起的光致发光（PL）波长的调制取决于反应器中基板的位置。推测原因是前体的表面反应速度常数在反应器中具有分布，这归因于前体和反应产物的浓度分布。

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