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首页> 外文期刊>Journal of Crystal Growth >A new heating configuration for hydrothermal crystal growth vessels to achieve better thermal and flow environments
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A new heating configuration for hydrothermal crystal growth vessels to achieve better thermal and flow environments

机译：用于水热晶体生长容器的新加热配置，以实现更好的热和流动环境

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This paper presents a numerical investigation on a new heating configuration for hydrothermal crystal growth vessels. On the upper growth camber, the top wall is cooled and the sidewall is insulated while the lower chamber is heated on the side wall. The thermal environments in the autoclaves with the top wall cooling and the conventional sidewall-cooling configurations are compared. Results show that the top wall cooling configuration establishes a much better thermal and flow environment in the upper growth chamber. With the sidewall-cooling configuration, the flow consists of a jet-like flow along the vertical centerline and downward wall layers. Comparatively, with the top wall-cooling configuration, the three-dimensional unsteady swirling flow establishes a more homogeneous and isotropic thermal and flow environment in most of the space in the main growth region which is ideal for the crystal growth. In the lower dissolving chamber, which is heated on the sidewall, temperature is higher near the baffle and lower at the bottom. Such a temperature distribution guaranties the raw material on the top of the stack be dissolved first.
机译：本文对水热晶体生长容器的新型加热结构进行了数值研究。在上生长外倾角上，顶壁被冷却，侧壁被绝缘，而下腔室在侧壁上被加热。比较了采用顶壁冷却和常规侧壁冷却配置的高压釜的热环境。结果表明，顶壁冷却配置在上部生长室中建立了更好的热和流动环境。通过侧壁冷却配置，气流由沿着垂直中心线和向下壁层的射流状气流组成。相比之下，采用顶壁冷却配置时，三维非定常旋流在主要生长区域的大部分空间中建立了更均匀，各向同性的热和流动环境，非常适合晶体生长。在侧壁上受热的下部溶解室中，挡板附近的温度较高，而底部则较低。这样的温度分布保证了堆叠顶部的原材料首先被溶解。

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