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首页> 外文期刊>Journal of Crystal Growth >Temperature homogeneity of polysilicon rods in a Siemens reactor
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Temperature homogeneity of polysilicon rods in a Siemens reactor

机译:西门子反应堆中多晶硅棒的温度均匀性

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摘要

Siemens process productivity can be limited by non-homogeneous temperature profile in polysilicon rods. To overcome this limitation high-frequency current sources have been proposed. An analysis is presented which, based on electromagnetic and heat transfer theory, studies temperature and current density profiles within the rods. Two linked differential equations have been numerically solved by use of non-linear methods. The solution of these equations shows that by means of an increase in current frequency, skin effect takes place, heat generation in the inner part of the rod is decreased and therefore temperature homogeneity increases. The effect of the reflectivity of reactor walls is also analysed and reveals that temperature homogeneity can be improved by minimizing radiation losses better than by heating with high-frequency current sources.
机译:多晶硅棒中的非均匀温度曲线可能会限制Siemens的生产效率。为了克服该限制,已经提出了高频电流源。提出了一种分析,该分析基于电磁和热传递理论来研究棒内的温度和电流密度分布。通过使用非线性方法,已经数值求解了两个链接的微分方程。这些方程式的解表明,通过增加电流频率,会发生集肤效应,从而减少了棒内部的热量产生,从而提高了温度均匀性。还分析了反应堆壁反射率的影响,发现与通过高频电流源加热相比,通过将辐射损失最小化,可以改善温度均匀性。

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