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首页> 外文期刊>Journal of Crystal Growth >Growth of InAs bilayer quantum dots for long-wavelength laser emission on GaAs
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Growth of InAs bilayer quantum dots for long-wavelength laser emission on GaAs

机译：GaAs上长波长激光发射InAs双层量子点的生长

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摘要

We reported the growth of asymmetric InAs bilayer quantum dots (QD) on GaAs substrate by molecular beam epitaxy. A combination of different InAs growth rates (GR) for the two QD layers was used, respectively, to increase QD density and extend photoluminescence (PL) emission wavelength. A high GR used for the first layer guarantees a high QD density; while a low GR used for the second layer helps to extend the PL emission wavelength due to the dot size increase, which was confirmed by transmission electron microscopy and PL measurements. It was found that this kind of QDs is very sensitive to post-growth annealing procedure due to the dot size increase. By appropriately choosing the growth parameters, InAs bilayer QD laser diodes embedded in a conventional AlGaAs/GaAs waveguide structure were demonstrated. The devices yielded the lowest ever reported threshold current density of 134 A/cm~2 in the range of 1.5 μm wavelength for GaAs-based lasers.
机译：我们报告了通过分子束外延在GaAs衬底上生长不对称InAs双层量子点（QD）。分别使用两个QD层的不同InAs生长速率（GR）的组合来增加QD密度并扩展光致发光（PL）发射波长。用于第一层的高GR保证了高QD密度；而用于第二层的低GR则由于点尺寸增加而有助于延长PL发射波长，这已由透射电子显微镜和PL测量证实。发现由于点尺寸的增加，这种量子点对生长后退火过程非常敏感。通过适当选择生长参数，演示了嵌入传统AlGaAs / GaAs波导结构中的InAs双层QD激光二极管。对于基于GaAs的激光器，该器件产生的有史以来最低的阈值电流密度为134 A / cm〜2，在1.5μm波长范围内。

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