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首页> 外文期刊>Journal of Crystal Growth >Low-temperature transport properties in quantum wells: Well-width dependence
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Low-temperature transport properties in quantum wells: Well-width dependence

机译：量子阱中的低温传输特性：阱宽依赖性

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摘要

Low-temperature magneto-transport properties of Al_xGa(1-x)As_ySb_(1-y)/InAs deep quantum wells (QWs) with different well widths (L_w = 15-500 nm) and their dimensionality were studied. The Hall data were analyzed by means of the two-carrier model: coexistence of electrons and holes for L_w = 15-150 nm and existence of two types of electrons with different mobility for L_w = 300 and 500 nm. The profile of perpendicular magnetoresistance (MR), p_(xx)(B_⊥) for the two-dimensional electrons (2DEs) in narrow QWs (L_w = 15 and 50 nm) can be divided into the following four regimes: (1) the negative MR due to the weak localization (WL) in extremely low B-fields, (2) the crossing of p_xx for different temperatures at B_c = 1/μ_e in moderate B-fields due to the orbital effect on the electron-electron interaction, (3) the Shubnikov-de Haas oscillations and (4) the quantum Hall effect in high-B fields. As for the in-plane MR except in the very low-field region characterized by the WL, Δpxx(B_‖)/p0 always starts from a negative one essentially independent of T, which was explained by the classical boundary scattering at the wall of the barrier in quasi-ballistic regime. The quantum Hall resistance of the electron-hole system has also been discussed.
机译：研究了具有不同阱宽度（L_w = 15-500 nm）的Al_xGa（1-x）As_ySb_（1-y）/ InAs深量子阱（QWs）的低温磁迁移性质及其尺寸。通过两个载流子模型分析霍尔数据：L_w = 15-150 nm的电子和空穴共存，以及L_w = 300和500 nm的两种类型的电子具有不同的迁移率。窄量子阱（L_w = 15和50 nm）中的二维电子（2DEs）的垂直磁阻（MR），p_（xx）（B_⊥）的分布可分为以下四种形式：（1）负MR是由于在极低的B场中存在弱的局部化（WL），（2）由于轨道对电子电子相互作用的影响，在中等B场中B_c = 1 /μ_e时，不同温度下p_xx的交点， （3）Shubnikov-de Haas振荡和（4）高B场中的量子霍尔效应。至于平面内MR，除了在以WL为特征的极低场区域外，Δpxx（B _′）/ p0总是从负数开始，该负数基本上与T无关，这可以通过壁的经典边界散射来解释。准弹道政权的障碍。还讨论了电子-空穴系统的量子霍尔电阻。

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