Epitaxial growth of ferromagnetic Fe_3N films on Si(1 1 1) substrates by molecular beam epitaxy

K. Yamaguchi; T. Yui; K. Yamaki; I. Kakeya; K. Kadowaki; T. Suemasu

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Epitaxial growth of ferromagnetic Fe_3N films on Si(1 1 1) substrates by molecular beam epitaxy

机译：Si（1 1 1）衬底上通过分子束外延外延生长Fe_3N铁磁薄膜

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c-Axis-oriented hexagonal Fe_3N films were epitaxially grown on Si(1 1 1) substrates by molecular beam epitaxy using AlN/3C-SiC intermediate layers. Fe_3N epitaxial film grown on AlN/3C-SiC/Si(1 1 1) has a smooth surface and atomically flat two-dimensional terraces. It was found that the magnetic moments of Fe3N epitaxial film faced parallel to the film plane, and that the saturation magnetization per Fe atom was approximately 1.8 μ_b at 5K, where μ_b is the Bohr magneton. The nitrogen composition in Fe_xN (2 < x < 3), and thus its magnetic properties, could be controlled even after the growth by irradiation of a radical nitrogen beam.

机译：使用AlN / 3C-SiC中间层通过分子束外延在cSi（1 1 1）衬底上外延生长c轴取向的六方Fe_3N薄膜。在AlN / 3C-SiC / Si（1 1 1）上生长的Fe_3N外延膜具有光滑的表面和原子平坦的二维平台。发现Fe3N外延膜的磁矩与膜平面平行，并且每个Fe原子的饱和磁化强度在5K下约为1.8μ_b，其中μ_b是玻尔磁子。 Fe_xN（2

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来源
《Journal of Crystal Growth》 |2007年第4期|597-601|共5页
作者
K. Yamaguchi; T. Yui; K. Yamaki; I. Kakeya; K. Kadowaki; T. Suemasu;
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作者单位

Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A3. Molecular beam epitaxy; B1. Nitrides; B2. Magnetic materials; B2. Semiconducting Ⅲ-Ⅴ materials;

机译：A3。分子束外延;B1。氮化物;B2。磁性材料;B2。半导体Ⅲ-Ⅴ材料;

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1. Epitaxial growth of ferromagnetic Fe_3N films on Si(111) substrates by molecular beam epitaxy [J] . K. Yamaguchi, T. Yui, K. Yamaki, Journal of Crystal Growth . 2007,第Apr期

机译：Si（111）衬底上通过分子束外延外延生长Fe_3N铁磁薄膜
2. Epitaxial Growth and Magnetic Properties of Ferromagnetic Fe_3N on Si(111) by Molecular Beam Epitaxy Using AlN/3C-SiC Intermediate Layers [J] . Kimiaki Yamaguchi, Tatsuya Yui, Yoshitake Ichikawa, Japanese Journal of Applied Physics. Part 2, Letters & Express Letters . 2006,第24a28期

机译：AlN / 3C-SiC中间层通过分子束外延法在Si（111）上铁磁性Fe_3N的外延生长和磁性
3. Epitaxial growth and magnetic characterization of ferromagnetic Co_4N thin films on SrTiO_3(001) substrates by molecular beam epitaxy [J] . Keita Ito, Kazunori Harada, Kaoru Toko, Journal of Crystal Growth . 2011,第1期

机译：SrTiO_3（001）衬底上铁磁Co_4N薄膜的外延生长和分子束外延表征
4. Growth of epitaxial ZnO films on sapphire substrates by plasma assisted molecular beam epitaxy [C] . Adam.R. Hyndman, Martin.W. Allen, Roger.J. Reeves Conference on oxide-based materials and devices . 2015

机译：等离子体辅助分子束外延在蓝宝石衬底上生长外延ZnO薄膜
5. Growth of wurtzite gallium nitride epitaxial films on sapphire substrate by reactive molecular beam epitaxy and material characterization. [D] . Kim, Wook. 1998

机译：通过反应分子束外延和材料表征，在蓝宝石衬底上生长纤锌矿型氮化镓外延膜。
6. Magnetic and transport properties of epitaxial thin film MgFe2O4 grown on MgO (100) by molecular beam epitaxy [O] . Han-Chun Wu, Ozhet Mauit, Cormac Ó Coileáin, -1

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7. Epitaxial growth and magnetic characterization of ferromagnetic Co4N thin films on SrTiO3(001) substrates by molecular beam epitaxy [O] . Ito Keita, Harada Kazunori, Toko Kaoru, 2011

机译：SrTiO3（001）衬底上铁磁Co4N薄膜的外延生长和分子束外延表征

Epitaxial growth of ferromagnetic Fe_3N films on Si(1 1 1) substrates by molecular beam epitaxy

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