Structural and optical studies of (AlAs)_m/(GaAs)_n type-Ⅰ ultra short-period superlattices with fractional monolayer

Kensuke Fujii; Noriaki Tsurumachi; Hayato Miyagawa; Rintaro Ueji; Hiroshi Itoh; Shunsuke Nakanishi; Hidefumi Akiyama; Shyun Koshiba

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Structural and optical studies of (AlAs)_m/(GaAs)_n type-Ⅰ ultra short-period superlattices with fractional monolayer

机译：单层分数层（AlAs）_m /（GaAs）_nⅠ型超短周期超晶格的结构和光学研究

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Structural and optical properties of (AlAs)_m/(GaAs)_n type-Ⅰ ultra short-period superlattices (USSLs) whose thickness ratio of AlAs and GaAs layers is 3:7 were studied. Especially, we paid attention to the superlattices (SLs) with the period length (Λ) of fractional monolayer (ML) grown by molecular beam epitaxy (MBE). From the photoluminescence (PL) measurements of the USSL, we found that the PL energies increase as the Λs decrease. The observed PL energies dependence on the Λs well agrees with the calculation results from a simple model based on Kronig-Penny model even in the case of the Λs are quite small.

机译：研究了AlAs和GaAs层的厚度比为3：7的（AlAs）_m /（GaAs）_nⅠ型超短周期超晶格（USSLs）的结构和光学性质。特别是，我们关注通过分子束外延（MBE）生长的分数单层（ML）的周期长度（Λ）的超晶格（SL）。从USSL的光致发光（PL）测量，我们发现PL能量随着Λs的减小而增加。即使在Λs很小的情况下，观测到的对Λs的PL能量依赖性也很好地与基于Kronig-Penny模型的简单模型的计算结果吻合。

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来源
《Journal of Crystal Growth》 |2007年第4期|p.168-171|共4页
作者
Kensuke Fujii; Noriaki Tsurumachi; Hayato Miyagawa; Rintaro Ueji; Hiroshi Itoh; Shunsuke Nakanishi; Hidefumi Akiyama; Shyun Koshiba;
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作者单位

Faculty of Engineering, Kagawa University, Takamatsu, Kagawa 761-0396, Japan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A3. Molecular beam epitaxy; A3. Superlattices; B2. Semiconducting Ⅲ-Ⅴ materials;

机译：A3。分子束外延;A3。超晶格;B2。半导体Ⅲ-Ⅴ材料;

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1. Structural and optical studies of (AlAs)_m/(GaAs)_n type-I ultra short-period superlattices with fractional monolayer [J] . Kensuke Fujii, Noriaki Tsurumachi, Hayato Miyagawa, Journal of Crystal Growth . 2007,第Apr期

机译：单层分数层（AlAs）_m /（GaAs）_n I型超短周期超晶格的结构和光学研究
2. Optically detected cyclotron resonance studies of In_xGa_(1-x)N_yAs_(1-y)/GaAs quantum wells sandwiched between type-Ⅱ AlAs/GaAs superlattices [J] . D. Dagnelund, I. Vorona, X. J. Wang, Journal of Applied Physics . 2007,第7期

机译：夹在Ⅱ型AlAs / GaAs超晶格之间的In_xGa_（1-x）N_yAs_（1-y）/ GaAs量子阱的光学探测回旋共振研究
3. Structural Analyses of Fractional Monolayer (GaAs)_m/(AlAs)_n Superlattices by X-ray Resonant/Off-Resonant Scattering [J] . Hayato Miyagawa, Shyun Koshiba, Katsuhiro Takao, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2006,第4B期

机译：X射线共振/非共振散射对分数单层（GaAs）_m /（AlAs）_n超晶格的结构分析
4. Electron state symmetries and optical transitions in the (GaAs)_n(AlAs)_n short-period superlattices grown along the 001,110, and 111 directions [C] . Yu.E.Kitaev, a.G.Panfilov, P.T.ronc, International symposium on compound semiconductors . 1997

机译：沿001，110和111方向生长的（GaAs）_n（ala）_n（alas）_n（alas）_n的光学转换和光学转换
5. Growth of InAs/GaAs short-period strained-layer superlattices by molecular beam epitaxy. [D] . Lewis, Jonathan Henry. 1997

机译：InAs / GaAs短周期应变层超晶格的分子束外延生长。
6. A High-Throughput Study of the Electronic Structure and Physical Properties of Short-Period (GaAs)m(AlAs)n (m n ≤ 10) Superlattices Based on Density Functional Theory Calculations [O] . Qing-Lu Liu, Zong-Yan Zhao, Jian-Hong Yi, 2018

机译：基于密度泛函理论计算的短周期（GaAs）m（AlAs）n（mn≤10）超晶格的电子结构和物理性质的高通量研究
7. A High-Throughput Study of the Electronic Structure and Physical Properties of Short-Period (GaAs)m(AlAs)n (m, n ≤ 10) Superlattices Based on Density Functional Theory Calculations [O] . Qing-Lu Liu, Zong-Yan Zhao, Jian-Hong Yi, 2018

机译：基于密度泛函理论计算的电子结构和短时间（GaAs）M（ALAS）N（M，N≤10）超晶格的电子结构和物理性质的高通量研究
8. Multiband Coupling and Electronic Structure of Short-Period (GaAs)n/ (AlAs)n (001) Superlattices. [R] . Glinskii, G. F., Lakisov, V. A., Dolmatov, A. G., 2000

机译：短周期（Gaas）n /（alas）n（001）超晶格的多频带耦合和电子结构。

Structural and optical studies of (AlAs)_m/(GaAs)_n type-Ⅰ ultra short-period superlattices with fractional monolayer

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