Fabrication of GaN dot structure by droplet epitaxy using NH_3

Takahiro Maruyama; Hiroaki Otsubo; Toshiyuki Kondo; Yo Yamamoto; Shigeya Naritsuka

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Fabrication of GaN dot structure by droplet epitaxy using NH_3

机译：使用NH_3通过液滴外延制造GaN点结构

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摘要

In GaN dots grown by droplet epitaxy using NH_3, the relation between growth temperature, and size, density, and degree of nitridation was investigated. As growth temperature increased from 390 to 700℃, both enlargement of dot size and a drop in dot density were observed, which seemed to be caused by both migration and evaporation of Ga atoms. In contrast, post-growth annealing at 700℃ under an NH_3 atmosphere for the sample grown at 520℃ had the effects of remarkably increasing dot density, reducing dot size, and improving nitridation of the grown dots. The mechanism of GaN dot growth by droplet epitaxy using NH_3 is discussed, and the effectiveness of the post-growth annealing under an NH_3 atmosphere is shown.

机译：在使用NH_3通过液滴外延生长的GaN点中，研究了生长温度与尺寸，密度和氮化度之间的关系。随着生长温度从390℃升高到700℃，观察到了点尺寸的增大和点密度的下降，这似乎是由Ga原子的迁移和蒸发引起的。相反，对于在520℃下生长的样品，在NH_3气氛下在700℃下进行生长后退火，具有显着提高点密度，减小点尺寸和改善生长点的氮化的效果。讨论了使用NH_3通过液滴外延生长GaN点的机理，并显示了在NH_3气氛下进行后生长退火的有效性。

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来源
《Journal of Crystal Growth》 |2007年第4期|p.486-489|共4页
作者
Takahiro Maruyama; Hiroaki Otsubo; Toshiyuki Kondo; Yo Yamamoto; Shigeya Naritsuka;
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作者单位

Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku, Nagoya 468-8502, Japan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. Surface structure; A3. Molecular beam epitaxy; B1. Nanomaterials; B1. Nitrides; B2. Semiconducting gallium compounds;

机译：A1。表面结构;A3。分子束外延;B1。纳米材料;B1。氮化物;B2。半导体镓化合物;

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1. Fabrication of GaN dot structures on Si substrates by droplet epitaxy [J] . Toshiyuki Kondo, Koji Saitoh, Yo Yamamoto, Physica Status Solidi. A, Applications and Materials Science . 2006,第7期

机译：液滴外延在Si衬底上制备GaN点结构
2. In situ annealing of GaN dot structures grown by droplet epitaxy on (111) Si substrates [J] . Shigeya Naritsuka, Toshiyuki Kondo, Hiroaki Otsubo, Journal of Crystal Growth . 2007,第1期

机译：在（111）Si衬底上通过液滴外延生长的GaN点结构的原位退火
3. In situ annealing of GaN dot structures grown by droplet epitaxy on (1 1 1) Si substrates [J] . Shigeya Naritsuka, Toshiyuki Kondo, Hiroaki Otsubo, Journal of Crystal Growth . 2007,第1期

机译：在（1 1 1）Si衬底上通过液滴外延生长的GaN点结构的原位退火
4. Fabrication Of Self-Assembled GaAs/AIGaAs Quantum Dots By Low-Temperature Droplet Epitaxy [C] . Chae-Deok Lee, Chanro Park . 1998

机译：低温液滴外延法制备自组装GaAs / AIGaAs量子点
5. Silicon and silicon-germanium epitaxy for quantum dot device fabrications towards an electron spin-based quantum computer. [D] . Yao, Kun. 2009

机译：硅和硅锗外延用于制造基于电子自旋的量子计算机的量子点器件。
6. Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy [O] . Ing-Song Yu, Chun-Pu Chang, Chung-Pei Yang, 2014

机译：等离子体辅助分子束外延通过液滴外延对Si（111）上的GaN纳米点进行表征和密度控制
7. Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy [O] . 2014

机译：等离子体辅助分子束外延通过液滴外延对Si（111）上的GaN纳米点进行表征和密度控制

Fabrication of GaN dot structure by droplet epitaxy using NH_3

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