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首页> 外文期刊>Journal of Crystal Growth >Development of a software for the numerical simulation of VCz growth under the influence of a traveling magnetic field
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Development of a software for the numerical simulation of VCz growth under the influence of a traveling magnetic field

机译:在行进磁场影响下VCz增长数值模拟软件的开发

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摘要

A software for the numerical simulation of crystal growth from the melt under the influence of a traveling magnetic field was developed by coupling a global stationary simulation of the temperature distribution and the electro-magnetic fields to a local transient simulation of the melt. Numerical results of the simulation of the vapor pressure controlled Czochralski (VCz) growth of GaAs are presented.
机译:通过将温度分布和电磁场的整体平稳模拟与熔体的局部瞬态模拟耦合起来,开发了一种用于在行进磁场影响下从熔体中晶体生长进行数值模拟的软件。给出了GaAs的蒸气压控制Czochralski(VCz)生长模拟的数值结果。

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