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首页> 外文期刊>Journal of Crystal Growth >Hydrothermal growth and characterization of indium-doped-conducting ZnO crystals
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Hydrothermal growth and characterization of indium-doped-conducting ZnO crystals

机译：铟掺杂导电ZnO晶体的水热生长及其表征

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Indium-doped-conducting ZnO crystals have been grown by the hydrothermal technique. The hydrothermal growth mechanism, as influenced by impurities, particularly In~(3+), is investigated. Indium ions or indium coordinated anionic groups such as In(H_2O)_2(OH)_4~- in alkaline solutions tend to absorb on both (0 0 0 1) and (0 0 0 1) faces of ZnO, resulting in a reduction of growth on the two polar faces, while facilitating growth on the m faces; the grown crystals exhibited a plate-like crystal morphology. We have used this growth characteristic to increase the diameter of opiate ZnO seeds along the m-planes for the growth of nominally undoped (lithium-doped) large-size ZnO crystals. Transmission spectra of both nominally undoped and indium-doped ZnO crystals were measured for comparison. Indium doping reduced the transmittance of ZnO crystals; the absorption edge of In:ZnO was red-shifted with respect to nominally undoped ZnO. The temperature dependence of the resistivity and carrier concentration measured at temperatures from 86 to 360 K indicated that the indium-doped ZnO, which contains about 150-175 ppmwt of indium in the crystals, are of high conductivity, with a resistivity lower than 0.015Ω-cm and Hall carrier concentration of 1.09 x 10~(19) electrons/cm~3 at room temperature. This research on hydrothermal growth of ZnO bulk crystals in the presence of In~(3+) will not only have an impact on the supply of ZnO-conducting substrates, but also contribute to the understanding of ZnO growth mechanisms in the presence of impurities.
机译：通过水热技术已经生长了掺杂铟的导电ZnO晶体。研究了受杂质特别是In〜（3+）影响的水热生长机理。在碱性溶液中，铟离子或铟配位阴离子基团（例如In（H_2O）_2（OH）_4〜-）倾向于在ZnO的（0 0 0 1）和（0 0 0 1）面上吸收，导致ZnO的还原在两个极面上增长，同时促进在m面上增长；生长的晶体表现出板状晶体形态。我们已经使用这种生长特性来增加阿片类ZnO种子沿m平面的直径，以生长标称未掺杂（掺杂锂）的大型ZnO晶体。测量了标称未掺杂和铟掺杂的ZnO晶体的透射光谱，以进行比较。铟掺杂降低了ZnO晶体的透射率。 In：ZnO的吸收边缘相对于标称未掺杂的ZnO发生了红移。在86至360 K的温度下测得的电阻率和载流子浓度的温度依赖性表明，掺有铟的ZnO具有高电导率，其电阻率低于0.015Ω，该铟在晶体中的铟含量约为150-175 ppmwt。 -cm和室温下的霍尔载流子浓度为1.09 x 10〜（19）电子/ cm〜3。在In〜（3+）存在下对ZnO块状晶体进行水热生长的研究不仅会影响ZnO导电衬底的供应，而且有助于理解在存在杂质的情况下ZnO的生长机理。

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