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首页> 外文期刊>Journal of Crystal Growth >Analysis on reflection spectra in strained ZnO thin films
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Analysis on reflection spectra in strained ZnO thin films

机译：应变ZnO薄膜的反射光谱分析

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Thin films of laser molecular-beam epitaxy grown ZnO films were studied with respect to their optical properties. 4-K reflectivity was used to analyze various samples grown at different biaxial in-plane strains. The spectra show two structures at approximate to 3.37 eV corresponding to the A-free exciton transition and at approximate to 3.38 eV corresponding to the B-free exciton transition. Theoretical reflectivity spectra were calculated using the spatial dispersion model. Thus, the transverse energies, the longitudinal transversal splitting (ELT), the oscillator strengths, and the damping parameters were determined for both the A- and B-free excitons of ZnO. As a rough trend, the strain dependence of the energy ELT for the A-excitons is characterized by a negatively peaking behavior with a minimum around the zero strain, while ELT for the B-excitons is an increasing function of the strain field values. (c) 2005 Elsevier B.V. All rights reserved.
机译：研究了激光分子束外延生长的ZnO薄膜的光学特性。 4-K反射率用于分析在不同双轴面内应变下生长的各种样品。光谱显示出两种结构，分别对应于无A的激子跃迁约3.37 eV和对应于无B的激子跃迁约3.38 eV。使用空间色散模型计算理论反射光谱。因此，对于ZnO的无A和无B激子，确定了横向能量，纵向横向分裂（ELT），振荡器强度和阻尼参数。作为一个粗略的趋势，A激子的能量ELT的应变依赖性的特征在于负峰值行为，在零应变附近具有最小值，而B激子的ELT是应变场值的增加函数。 （c）2005 Elsevier B.V.保留所有权利。

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